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Light-emitting diode device and production method thereof

A technology of light-emitting diodes and devices, which is applied in the direction of semiconductor devices, electrical solid devices, electrical components, etc., can solve the problems of deterioration of light-emitting chips, glue solution that cannot withstand high temperatures, and cannot ensure that chips are evenly coated with phosphors, etc.

Inactive Publication Date: 2012-11-28
ANHUI SANAN OPTOELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But it also cannot guarantee that the side of the chip is evenly coated with phosphor
In addition, as the junction temperature of the chip continues to rise (in theory, the junction temperature of the blue-light chip can reach 300°C), but because the glue is difficult to withstand high temperatures, it will contact with the light-emitting chip to generate heat and deteriorate. The above packaging scheme is difficult to meet the requirements.

Method used

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  • Light-emitting diode device and production method thereof
  • Light-emitting diode device and production method thereof
  • Light-emitting diode device and production method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] Such as Figure 10 A light-emitting diode device shown includes: three LED epitaxial layers arranged at intervals, wherein the epitaxial layer includes a first semiconductor layer 101, a light-emitting layer 102 and a second semiconductor layer 103; it is composed of a transparent glass 107 and a transparent conductive layer 106 The first transparent conductive glass structure is formed on the first semiconductor layer 101 and is used to connect the negative electrode 109 of the power supply; the second transparent conductive glass structure composed of transparent glass 105 and transparent conductive layer 104 is formed on the second On the semiconductor layer 103 , it is used to connect the positive electrode 108 of the power supply.

[0042] Specifically, the above light-emitting diode device includes: 3 LED epitaxial layers arranged at intervals, wherein the epitaxial layer includes an N-GaN layer 101, a light-emitting layer 102 and a P-GaN layer 103; a transparent ...

Embodiment 2

[0054] Such as Figure 17 A light-emitting diode device shown includes: three LED epitaxial layers arranged at intervals, wherein the epitaxial layer includes a first semiconductor layer 201, a light-emitting layer 202 and a second semiconductor layer 203; a reflective layer 206 and a heat dissipation substrate 207 The first substrate structure is formed on the first semiconductor layer 201 and is used to connect the negative electrode 210 of the power supply; the second substrate structure containing phosphor powder composed of transparent glass 205 and transparent conductive layer 204 is formed on the second semiconductor layer Layer 203 is used to connect the positive electrode 209 of the power supply.

[0055] Specifically, the above light-emitting diode device includes: 3 LED epitaxial layers arranged at intervals, wherein the epitaxial layer includes an N-GaN layer 201, a light-emitting layer 202 and a P-GaN layer 203; 207, the first reflective and heat-dissipating subs...

Embodiment 3

[0066] Such as Figure 18 As shown, the light-emitting diode device is different from Example 1 in that the number of LED epitaxial layers is 5, which can form a high-density arrangement; the first substrate structure is composed of a transparent conductive substrate structure containing phosphor, wherein the transparent conductive substrate structure It is composed of transparent flexible plastic 307 and transparent ITO conductive layer 306 .

[0067] The manufacturing method of the above-mentioned light-emitting diode device differs from Embodiment 2 in that:

[0068] In order to improve the light conversion efficiency more effectively, the first substrate is a transparent conductive substrate structure containing phosphor powder, which can form a sandwich structure with the LED epitaxial layer and the second substrate structure containing phosphor powder, forming an all-round non-blocking positive and negative metal electrodes The white light-emitting diode can more ...

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Abstract

The invention discloses a light-emitting diode device and a production method thereof. The production method comprises the following steps of: arranging a first conducting substrate and a second light-transmitting conducting structure respectively on the bottom surface and the top surface of a light-emitting epitaxial structure which at least comprises two light-emitting epitaxial units, so as to form light-emitting diodes arrayed with a high density, without a positive metal electrode and a negative metal electrode, and capable of increasing light emission, wherein the light rays emitted by a light-emitting layer can be effectively taken out, the light absorption phenomena of the metal electrodes can be reduced, the light-emitting efficiency can be increased, heat resistance can be reduced, the service lives of the light-emitting diodes can be prolonged, packaging materials can be saved, and technological processes can be simplified.

Description

technical field [0001] The invention relates to a light emitting diode device and a manufacturing method thereof, in particular to a metal electrode-free light emitting diode device and a manufacturing method thereof. Background technique [0002] Light Emitting Diode (LED, Light Emitting Diode) is used in various fields due to its long life and low energy consumption. Devices, traffic signals, data storage devices, communication devices and lighting devices, etc. [0003] Generally speaking, the existing light-emitting diode structure, such as figure 1 As shown in a, there is mainly a base A with a groove A1, and a chip B is combined in the groove A1, and the chip B is connected to another bracket D through a connecting line C, and finally a light-transmitting layer E The injection molding of the base A, the chip B, the connecting wire C and another bracket D are combined into one body to complete the production of the light-emitting diode, and the steps are relatively co...

Claims

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Application Information

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IPC IPC(8): H01L33/64H01L33/50H01L33/62
CPCH01L2224/32245H01L2224/32257H01L2224/48091H01L2224/48247H01L2224/73265H01L2924/10158H01L2924/181H01L2924/00012H01L2924/00014H01L2924/00
Inventor 林素慧庄家铭彭康伟洪灵愿郑建森其他发明人请求不公开姓名
Owner ANHUI SANAN OPTOELECTRONICS CO LTD
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