Plasma etching residue cleaning fluid

Abstract

The invention discloses a fluorine-containing plasma etching residue cleaning fluid in the semiconductor industry. The cleaning fluid composition contains 5-75% of organic solvent, 10-50% of water, 0.1-20% of fluoride, 0.1-20% of organic amine, 0.1-10% of amino acid, and 0.01-5% (preferably 0.05-2%) of carbamidines. The cleaning fluid composition can effectively clean plasma etching residues in a semiconductor manufacturing process, has lower etching rate on a base material such as a low-dielectric material (SiO2 and PETEOS (plasma-enhanced tetraethoxysilane)) and some metal (such as Ti, Al and Cu), simultaneously has the capability of inhibiting galvanic corrosion of aluminum-copper alloy, and has excellent application prospects in the semiconductor chip cleaning and other micro-electronic fields.

Description

technical field [0001] The invention relates to a cleaning solution, in particular to a plasma etching residue cleaning solution. Background technique [0002] In the manufacturing process of semiconductor components, the coating, exposure and imaging of photoresist layers are necessary process steps for the pattern manufacturing of components. Residues of photoresist material need to be completely removed at the end of patterning (ie, after photoresist coating, imaging, ion implantation, and etching) before proceeding to the next process step. To date, a two-step process (dry ashing and wet etching) has generally been used in the semiconductor manufacturing industry to remove this photoresist film. The first step is to remove most of the photoresist layer (PR) by dry ashing; the second step is to use a corrosion inhibitor composition wet etching / cleaning process to remove and clean the remaining photoresist layer. The step is generally cleaning solution / rinse / rinse with ...

AI Technical Summary

Problems solved by technology

However, due to the relatively short time of production and use of fluorine-based cleaning fluids, research in this area remains to be further explored.

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