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Alkaline cleaning solution for removing particles on surface of copper wafer and inhibiting galvanic corrosion

A technology of surface particle and galvanic corrosion, applied in the field of cleaning liquid composition, can solve the problems of surface residue of cleaning agent, non-uniform surface corrosion, etc., and achieve the effect of preventing copper corrosion, improving service performance and improving perfection

Pending Publication Date: 2020-02-21
HEBEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The international mainstream copper CMP cleaning uses an acidic cleaning agent. The disadvantage is that the cleaning agent remains on the surface after cleaning, causing non-uniform corrosion on the surface.

Method used

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  • Alkaline cleaning solution for removing particles on surface of copper wafer and inhibiting galvanic corrosion
  • Alkaline cleaning solution for removing particles on surface of copper wafer and inhibiting galvanic corrosion
  • Alkaline cleaning solution for removing particles on surface of copper wafer and inhibiting galvanic corrosion

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preparation example Construction

[0045] The preparation method of alkaline cleaning solution of the present invention is:

[0046] 1) Accurately weigh each component;

[0047] 2) Add the weighed multi-component surfactant and inhibitor into the beaker, add different multiples of deionized water to dilute, and stir to make it completely dissolve;

[0048] 3) Add the chelating agent that has been weighed, stir evenly, add a pH regulator, measure the pH value and electrical conductivity of the solution, set the volume to a certain volume, and filter to obtain an alkaline cleaning solution.

[0049] The effect that the present invention adopts method is:

[0050] The surfactant used in the copper cleaning solution has wetting properties, which can effectively reduce the surface tension of the solution, and then hold up and wrap the particles by the penetration of the penetrant. The active agent molecules with strong penetrability can penetrate deep into the surface of the copper sheet and the adsorbate, and dev...

Embodiment 1

[0052] Step 1: The multi-component surfactant obtained after mixing and stirring the alkylphenol polyoxyethylene ether and the secondary alkyl sodium sulfonate at a mass ratio of 1:1; the multi-component surfactant, 1,2,4- Stir after triazole and deionized water mix, then add chelating agent ethylenediaminetetraacetic acid tetrakis (tetrahydroxyethylethylenediamine), finally use potassium hydroxide solution (concentration is 10g / L) as the pH agent adjustment solution The pH value is 12, and the alkaline cleaning solution is obtained. Wherein, the mass ratio is multiple surfactants: 1,2,4-triazole: EDTA tetrakis(tetrahydroxyethylethylenediamine): water=1:0.1:0.2:1000;

[0053] Step 2: Use the above-mentioned cleaning solution on the cleaning machine to clean the copper light sheet. The cleaning conditions are cleaning fluid flow rate 1000ml / min, rotation speed 200rpm, brush spacing -1.25mm, cleaning time 100s, deionized water rinse time 150s, deionized water flow rate 500ml / mi...

Embodiment 2

[0057] Step 1: the multi-component surfactant obtained after mixing and stirring sorbitan oleic acid ester and sodium laureth sulfate at a mass ratio of 1:10; the multi-component surfactant, mercaptobenzothiazole as inhibitor and After the ionic water is mixed, stir, then add the chelating agent citric acid, and finally use triethanolamine as the pH agent to adjust the pH value of the solution to 11 to obtain the alkaline cleaning solution.

[0058] Wherein, mass ratio is multiple surfactant: mercaptobenzothiazole: citric acid: water=10:0.5:1:1000

[0059] Step 2: Use the above-mentioned cleaning solution on the cleaning machine to clean the copper light sheet. The cleaning conditions are cleaning fluid flow rate 300ml / min, rotation speed 150rpm, brush spacing -0.75mm, cleaning time 55s, deionized water flushing time 80s, deionized water flow rate 1000ml / min, drying time 100s, nitrogen blow dry The time is 60s.

[0060] image 3 It is the AFM figure that obtains in the embo...

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Abstract

The invention discloses an alkaline cleaning solution for removing particles on the surface of a copper wafer and inhibiting galvanic corrosion. The cleaning solution comprises multi-component surfactants, a chelating agent, an inhibitor, a pH regulator and deionized water, wherein the surfactants account for 0.1-1% by mass of the cleaning solution, the chelating agent accounts for 0.01-0.1% by mass of the cleaning solution, the inhibitor accounts for 0.01-0.1% by mass of the cleaning solution, and the balance is the deionized water, and the pH value of the cleaning solution is 10-12. The multi-component compounded surfactants comprise a nonionic surfactant and an anionic surfactant, wherein the mass ratio of the nonionic surfactant to the anionic surfactant is 1:1 to 1:20. According to the novel cleaning solution, the self-corrosion potential difference of cleaned copper-cobalt can be reduced to 42 mV, and the surface roughness can be reduced to be 0.4 nm or less.

Description

technical field [0001] The present invention relates to cleaning fluid compositions for removing residual particles after chemical mechanical polishing (CMP) of copper wafers. In more detail, it relates to a CMP cleaning liquid composition comprising multi-component surfactants, chelating agents, inhibitors, pH regulators and the balance of water. Background technique [0002] The production process of microelectronic wafers includes the step of cleaning semiconductor workpieces with liquid solutions during or after chemical mechanical planarization (CMP) processes. CMP is a polishing method in which chemical and mechanical polishing are carried out at the same time. Chemicals are used to form an easily removable active layer on the surface of the wafer. At the same time, abrasives, wafers and pads ( The pressure between the pads and the friction caused by the relative rotational speed remove the active layer for planarization. CMP technology can not only be applied to the...

Claims

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Application Information

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IPC IPC(8): C23G1/20C23G1/18
CPCC23G1/18C23G1/20
Inventor 檀柏梅田思雨张男男王淇黄妍妍刘孟瑞王亚珍
Owner HEBEI UNIV OF TECH
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