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Manufacturing method of array substrate, array substrate and display device

A manufacturing method and array substrate technology, which are applied in semiconductor/solid-state device manufacturing, optics, instruments, etc., can solve the problem of excessive third via etching, incomplete array substrate etching, affecting the yield and performance of the array substrate, etc. problems, to achieve the effect of improving yield and performance

Inactive Publication Date: 2012-12-19
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Embodiments of the present invention provide a method for manufacturing an array substrate and an array substrate, which can solve the problem that the formation of the first via hole and the third via hole is relatively fast while the formation of the second via hole is relatively slow in the prior art. Incomplete etching of the second via hole or excessive etching of the first via hole and the third via hole will affect the yield and performance of the entire array substrate

Method used

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  • Manufacturing method of array substrate, array substrate and display device
  • Manufacturing method of array substrate, array substrate and display device
  • Manufacturing method of array substrate, array substrate and display device

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Embodiment Construction

[0045] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention.

[0046] In order to make the advantages of the technical solution of the present invention clearer, the present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.

[0047] Such as figure 2 and image 3 As shown, the manufacturing method of the array substrate provided by the embodiment of the present invention includes:

[0048] Step 201, on the substrate having gate pattern 301, gate pad Gate Pad pattern 302 and gate insulating layer 303, form active layer pattern 304 and gate pad via hole 305; A gate line pattern is formed simultaneously with the pad pattern 302 (the gate line pattern is not shown).

[0049]...

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Abstract

The embodiment of the invention discloses a manufacturing method of an array substrate, an array substrate and a display device, which relates to the display technical field, and solves the problems of the prior art that a first through hole and a third through hole are rapid to form, a second through hole is slow to form, the second through hole of the array substrate is incomplete to etch and the third through hole is over-etched. The method comprises following steps of forming an active layer pattern and a grid mat through hole on a substrate with a grid pattern, a grid mat pattern and a grid insulation layer, wherein the grid mat through hole is formed on the area corresponding to the grid mat pattern, and the grid mat through hole comprises a grid insulation layer grid mat through hole;; forming a source pattern, a drain pattern and a data mat pattern; and forming a passivation layer, etching the passivation layer on the area corresponding to the drain pattern to form a passivation layer drain through hole, etching the passivation layer on the area corresponding to the grid mat pattern to form a passivation grid mat through hole, and etching the passivation layer on the area corresponding to the data mat pattern to form a passivation layer data mat through hole.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to a method for manufacturing an array substrate, the array substrate, and a display device. Background technique [0002] At present, a Thin Film Transistor Liquid Crystal Display (TFT-LCD for short) has been widely used in the field of display technology. There are many kinds of thin film field effect transistors (Thin Film Transistor, referred to as TFT) in TFT-LCD, commonly used are amorphous silicon thin film field effect transistors (a-Si Thin Film Transistor, referred to as a-Si TFT), oxide thin film field Oxide Thin Film Transistor (Oxide TFT for short), among them, Oxide TFT has been widely used in TFT-LCD due to its advantages such as high mobility, good light transmission, stable film structure, and low preparation temperature. Applications. [0003] As shown in FIG. 1(a), a general array substrate includes a pixel part 11 (Pixel Part), a data pad (Data Pad) 12...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/77H01L29/786H01L27/02G02F1/1362G02F1/1368
Inventor 曾勉金在光
Owner BOE TECH GRP CO LTD
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