Ultrasonic washing device for single crystal silicon wafer

Abstract

The invention discloses an ultrasonic washing device for a single crystal silicon wafer. The ultrasonic washing device comprises a washing tank and a frame for placing the single crystal silicon wafer, wherein a de-ionized water inlet and a de-ionized water outlet are arranged on a side wall of the washing tank; an ultrasonic vibrator is arranged at the bottom of an inner cavity in the washing tank; the frame comprises a quartz grid plane and a bracket; and the quartz grid plane is flatly arranged in the washing tank through the bracket, is lower than a horizontal plane of de-ionized water and has a distance from the bottom of the inner cavity in the washing tank. According to the ultrasonic washing device, the structure is simple, the cleanness of the washed single crystal silicon wafer can be improved, and the water consumption can be reduced.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to an ultrasonic cleaning device for a single crystal silicon wafer. Background technique [0002] During the processing of silicon wafers, every process involves cleaning. Since many semiconductor discrete devices are directly manufactured on the surface of silicon grinding wafers or diffused on the substrate, the quality of cleaning silicon grinding wafers will directly affect the quality of silicon grinding wafers. One process even affects the yield and reliability of the device. At present, there are two conventional cleaning methods for semiconductor silicon abrasive discs: hand washing and ultrasonic cleaning. The effect of hand washing is poor, and there will still be a lot of grinding emery and silicon powder remaining on the ground silicon wafer after cleaning. The structure of the ultrasonic cleaning device includes a cleaning tank, the tank wall is provided with deionized wat...

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Problems solved by technology

[0003] However, the above-mentioned ultrasonic cleaning device has the following defects: 1) The silicon wafer is vertically inserted into the carrying basket, and the ultrasonic source is emitted from the bottom upwards to contact the side surface of the silicon wafer, and the pollutants on the surface of the silicon wafer will remain and accumulate on the silicon 2) The soft flower basket made of PTFE material for carrying the silicon wafer will absorb and block the transmission of the ultrasonic source, which will also cause the local area of ​​the silicon wafer surface to be cleaned uncleanly

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