Single-chip horizontal packaging, packaging-after-etching and pad-embedded packaging structure and manufacturing method thereof

Abstract

The invention relates to a single-chip horizontal packaging, packaging-after-etching and pad-embedded packaging structure and a manufacturing method thereof. The structure comprises pads (1) and pins (2). A chip (4) is arranged on the right sides of the pads (1), and the right side of the chip (4) and the right sides of the pins (2) are connected through metal wires (5). Molding compounds (6) are packaged on the peripheries of the pads (1) and the pins (2) and outside the chip (4) and the metal wires (5). Holes (7) are opened on surfaces of the molding compounds (6) on the lower portions of the pins (2) and communicated with the reverse sides of the pins (2). Metal balls (9) are arranged in the holes (7) and contacted with the reverse sides of the pins (2). The single-chip horizontal packaging, packaging-after-etching and pad-embedded packaging structure and the manufacturing method thereof have the advantages of reducing manufacturing costs, improving safety and reliability of packaging bodies, reducing environmental pollution, and being capable of designing and manufacturing high-density lines.

Description

technical field [0001] The invention relates to a single-chip front-mounting first etching and then packaging base island embedded packaging structure and a manufacturing method thereof. It belongs to the technical field of semiconductor packaging. Background technique [0002] The manufacturing process flow of the traditional high-density substrate package structure is as follows: [0003] Step 1, see Figure 38 , take a substrate made of glass fiber material, [0004] Step two, see Figure 39 , opening holes at desired locations on the fiberglass substrate, [0005] Step three, see Figure 40 , coated with a layer of copper foil on the back of the glass fiber substrate, [0006] Step 4, see Figure 41 , fill the conductive material in the position where the glass fiber substrate is punched, [0007] Step five, see Figure 42 , coated with a layer of copper foil on the front of the glass fiber substrate, [0008] Step six, see Figure 43 , coated with a photoresis...

AI Technical Summary

Problems solved by technology

[0019] 3. Glass fiber itself is a kind of foaming material, so it is easy to absorb moisture and moisture due to the storage time and environment, which directly affects the safety capability or reliability level of reliability;

[0020] 4. The surface of the glass fiber is covered with a copper foil metal layer thickness of about 50-100 μm, and the etching distance between the metal layer line and the line can only achieve an etching gap of 50-100 μm due to the characteristics of the etching factor (etching factor: minimum The best manufacturing capability is that the etching gap is approximately equal to the thickness of the object being etched, see Figure 50 ), so it is impossible to truly design and manufacture high-density circuits;

[0022]6. Also because the entire substrate material is made of glass fiber, the thickness of the glass fiber layer is obviously increased by 100~150μm, and it cannot be really ultra-thin encapsulation;

[0023]7. Due to the large difference in material characteristics (expansion coefficient) of the traditional glass fiber plus copper foil technology, it is easy to cause stress deformation in the harsh environment process, directly Affects the accuracy of component loading and the adhesion and reliability of components and substrates

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