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Power bipolar transistor and manufacture method thereof

A bipolar transistor and power technology, which is applied in the manufacture of transistors, semiconductor/solid-state devices, electrical components, etc., can solve the problems of power bipolar transistors, such as power consumption, high hazard, and increase of parasitic resistance of the base region, and achieves The effect of alleviating the current edge-setting effect in the emitter region and improving the secondary breakdown power capacity

Inactive Publication Date: 2013-01-02
UNIV OF ELECTRONICS SCI & TECH OF CHINA +1
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Secondary breakdown is one of the main reasons for the failure of power bipolar transistors in applications. Secondary breakdown is usually irrecoverable, so it is very harmful
However, since the ring structure 8 has the same doping type as the emitter region, this will increase the parasitic resistance of the base region and bring additional power consumption to the power bipolar transistor

Method used

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  • Power bipolar transistor and manufacture method thereof
  • Power bipolar transistor and manufacture method thereof
  • Power bipolar transistor and manufacture method thereof

Examples

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Embodiment Construction

[0029] A power bipolar transistor such as figure 1 As shown, it includes from bottom to top: metal electrode 1 in the collector region, collector region 2 made of heavily doped semiconductor material of the first conductivity type, base region 3 made of semiconductor material of the second conductivity type; base region 3 There are metal electrodes 6 in the base area and an emission area 4 made of the first conductivity type semiconductor material which are in contact with the surface of the base area 3; above the emission area 4 are metal electrodes 7 in contact with the surface of the emission area 4; An isolation medium 5 is filled between the sidewall of the emitter region 4 and the metal electrode 6 of the base region, and between the metal electrode 6 of the base region and the metal electrode 7 of the emitter region.

[0030] A preparation method of a power bipolar transistor, as shown in the figure Figure 5-a — Figure 5-f shown, including the following steps:

[...

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Abstract

The invention discloses a power bipolar transistor and a manufacture method thereof and belongs to the field of semiconductor devices and technological manufacture. The power bipolar transistor sequentially comprises a collector area metal electrode, a collector area formed by first conduction type semiconductor materials and a base area formed by second conduction type semiconductor materials from bottom to top, wherein a base area metal electrode contacted with the surface of the base area and a transmission area formed by the first conduction type semiconductor materials are arranged above the base area; a transmission area metal electrode contacted with the surface of the transmission area is arranged above the transmission area, and isolation media are filled between the lateral wall of the transmission area and the base area metal electrode and between the base area metal electrode and the transmission area metal electrode. The lateral wall of the transmission area is wrapped by a medium layer, so that current of a base electrode directly flows to the lateral wall of the transmission area by contacting with the base area, and current side concentration effect is remitted. Simultaneously, the base area metal electrode is manufactured on the isolation media by punching holes, parasitic resistance of the base area cannot be added, and no influence can be caused on output power of the power bipolar transistor.

Description

technical field [0001] The invention belongs to the field of semiconductor devices and process manufacturing, and in particular relates to a power bipolar transistor structure and a preparation method thereof. Background technique [0002] Power bipolar transistors have been used commercially since the 1950s. Although the emergence of power MOSFETs in the 1970s replaced power bipolar transistors in some applications, they are still widely used as switching devices in various small and medium-sized power electronic circuits due to their mature technology and strong current handling capabilities. The physical characteristics of power bipolar transistors are essentially similar to ordinary triodes, but in order to achieve high collector voltages of power bipolar transistors, a high-resistance collector region is introduced. [0003] Secondary breakdown is one of the main causes of failure of power bipolar transistors in applications. Secondary breakdown is usually irrecoverabl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/73H01L21/331
Inventor 任敏李果宋洵奕张鹏王娜邓光敏张蒙李泽宏张金平张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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