Polycrystalline-silicon reducing and producing process and device

A production process, polysilicon technology, applied in the direction of silicon, etc., can solve the problems that the energy consumption of the reduction furnace is difficult to achieve the expected effect, and the heat energy of the polysilicon reduction furnace is not fully utilized, etc., and achieve high conversion rate, low energy consumption and high deposition speed. Effect

Active Publication Date: 2015-03-25
XINTE ENERGY
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to propose a polysilicon reduction production with stable thermal energy utilization and low energy consumption of the reduction furnace in view of the insufficient utilization of heat energy in the existing large-scale improved Siemens method polysilicon reduction furnace, and the energy consumption of the reduction furnace is difficult to achieve the expected effect Process and device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Polycrystalline-silicon reducing and producing process and device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] Such as figure 1 As shown, the polysilicon reduction production device described in the embodiment of the present invention includes a trichlorosilane vaporizer 5, a hydrogen preheater 4, a static mixer 3, a constant temperature heat exchanger 2 and a reduction furnace 1, and the trichlorosilane The gaseous trichlorosilane outlet of the vaporizer 5 and the hot hydrogen outlet of the hydrogen preheater 4 are respectively connected to the static mixer 3, and the pipeline between the mixed gas outlet of the static mixer 3 and the reduction furnace 1 is provided with the Constant temperature heat exchanger 2.

[0028] Further, the tail gas outlet of the reduction furnace 1 is communicated with the tube-side inlet of the trichlorosilane vaporizer 5, and the reduction tail gas is used as a heat source of the trichlorosilane vaporizer 5, and the tube-side outlet of the trichlorosilane vaporizer 5 is Connected to the hydrogen preheater 4, the reduction tail gas is used as the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a polycrystalline-silicon reducing and producing process which comprises the following steps: (a1) vaporizing trichlorosilane by a trichlorosilane vaporizer to obtain vaporous trichlorosilane; (a2) preheating hydrogen to obtain heated hot hydrogen at the same time, (a3) mixing the vaporous trichlorosilane and the hot hydrogen uniformly by a static mixer according to the proportion of excess of hydrogen to form the raw material mixed gas; (a4) increasing the temperature of the raw material mixed gas by a thermostatic heat exchanger and keeping the raw material mixed gas at constant temperature; and (a5) feeding the mixed gas with constant temperature into a reducing furnace. The polycrystalline-silicon reducing and producing process has the advantages of low power consumption, high deposition rate of polycrystalline silicon and high conversion rate of trichlorosilane in one time. The invention further discloses a polycrystalline-silicon reducing and producing device.

Description

technical field [0001] The invention relates to the field of polysilicon production, in particular to an improved Siemens method polysilicon reduction production process and device. Background technique [0002] Polysilicon reduction furnace is the core equipment for producing final products in polysilicon production, and its process is also a key link in determining system capacity and energy consumption. Therefore, the design of polysilicon reduction furnace process flow directly affects product quality, output and production cost. Under the influence of the global economic crisis, the price of polysilicon continues to drop, the market competition is becoming increasingly fierce, and the voice of enterprises to "survive" is getting higher and higher. Therefore, effectively reducing polysilicon energy consumption, improving product quality, and increasing production efficiency are important issues that polysilicon production enterprises need to solve at present. [0003] ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C01B33/03
Inventor 陈喜清银波潘小龙陈朝霞张伟刘桂林
Owner XINTE ENERGY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap