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A compound semiconductor solar cell

A technology of solar cells and semiconductors, applied in semiconductor devices, circuits, photovoltaic power generation, etc., can solve problems such as high power generation costs and obstacles to rapid commercialization, and achieve low contact resistance, good ohmic contact, and cost reduction.

Active Publication Date: 2015-12-16
TIANJIN SANAN OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the high cost of power generation of solar cell power generation technology has been hindering the rapid commercialization of this technology.

Method used

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  • A compound semiconductor solar cell
  • A compound semiconductor solar cell

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Embodiment Construction

[0021] The present invention will be further described below in conjunction with embodiment.

[0022] In existing compound semi-semiconductor solar cells, p-type materials are usually used as growth substrates, such as p-type Ge substrates, p-type GaAs substrates or p-type InP substrates. Taking the GaInP / GaAs / Ge triple-junction solar cell as an example, the full structure 100 of the GaInP / GaAs / Ge triple-junction solar cell is generally epitaxially formed on a p-type Ge substrate, and then the n-type GaAs ohmic contact layer 101 is continuously epitaxially formed. The doping concentration is 5×10 18 / cm 3 , and finally obtain the GaInP / GaAs / Ge triple-junction cell epitaxial structure on the conventional p-type Ge substrate. In the process of making the battery chip, the AuGeNi / Au metal electrode 102 is evaporated on the n-type GaAs ohmic contact layer 101. After rapid thermal annealing at 380°C for 3 minutes, the battery obtains a good ohmic contact, and its resistivity is 2...

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Abstract

Disclosed is a compound semiconductor solar battery, characterized in that a tunnel junction is inserted in the ohmic contact laminated layers of the battery, such that the conduction type of the surface of the ohmic contact layer is changed. As for the epitaxial structure disclosed in the present invention, the tunnel junction inserted in its ohmic contact layers has a smaller thickness, which will not cause an effective increase in the epitaxial cost of the battery; on the other hand, the change in the conduction type of the surface of the ohmic contact layer will enable cheaper metals to be selected and used for manufacturing chip electrodes of the battery, i.e. the production cost of the solar cell is effectively reduced while ensuring that the battery performances are maintained.

Description

technical field [0001] The invention belongs to the field of compound semiconductor solar cells, in particular to a compound semiconductor solar cell. Background technique [0002] In recent years, with the further aggravation of the energy crisis and ecological deterioration, the development and utilization of new renewable clean energy has become an urgent need for people to produce, live and maintain sustainable social development. In recent years, the development and utilization of solar energy and photovoltaic power generation technology have attracted widespread attention. Among them, compound semiconductor solar cells are recognized as the most potential ground-based power generation technology due to their high conversion efficiency and large power generation cost reduction space. However, solar cell power generation technology has high power generation cost, which has hindered the rapid commercialization of this technology. [0003] Usually, the epitaxial layer of ...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0352
CPCH01L31/022425H01L31/0687Y02E10/544Y02P70/50
Inventor 宋明辉林桂江丁杰刘建庆
Owner TIANJIN SANAN OPTOELECTRONICS