III-series nitride semiconductor device and manufacturing method thereof
A nitride semiconductor and nitride technology, applied in the field of microelectronics, can solve the problems of increased leakage, current collapse, and current collapse effect of gallium nitride devices, and achieve the effect of reducing the current collapse effect
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[0048] A group III nitride semiconductor device of the present invention includes:
[0049] Substrate
[0050] Nitride nucleation layer on the substrate;
[0051] A nitride buffer layer on the nitride nucleation layer;
[0052] A wide band gap and deep level modulation layer on the nitride buffer layer;
[0053] Nitride channel layer located on the wide band gap deep level modulation layer;
[0054] And an electrode formed on the nitride channel layer;
[0055] Wherein, the wide-bandgap deep-level modulation layer is formed of a group III nitride semiconductor layer containing deep-level defects, and the concentration of the deep-level defects is a constant or from a nitride buffer layer to a nitride channel layer Gradually decrease; the forbidden band width of the wide band gap and deep level modulation layer is larger than the band gap of the nitride channel layer.
[0056] Correspondingly, a method for manufacturing a group III nitride semiconductor device includes the following steps:...
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