Resistive random access memory and manufacture method thereof

Abstract

The invention provides a resistive random access memory having a leakage-restraining characteristic and a manufacture method thereof. The resistive random access memory can restrain Sneak current in a cross-shaped array of a large-scale resistive random access memory (RRAM). A memorizing unit forming the resistive random access memory comprises a lower electrode, a first semiconductor oxide layer, a resistive random access material layer, a second semiconductor oxide layer and an upper electrode which are stacked in sequence. A semiconductor oxide can be a semiconductor metallic oxide or semiconductor nonmetal oxide. The resistive random access memory can effectively reduce the Sneak current through a Schottky barrier formed by the semiconductor oxide and metal electrodes, is simple in manufacture process and can achieve high integration level of a device.

Description

technical field [0001] The invention belongs to the technical field of nonvolatile memory (Nonvolatile memory) in CMOS ultra-large-scale integration (ULSI), and in particular relates to a resistance variable memory with leakage suppression characteristics and a preparation method thereof. Background technique [0002] Solid-state storage devices play a very important role in the modern information society, and they exist in most of the electronic products we use every day. The existing memory is mainly DRAM and FLASH. With the continuous development of the semiconductor industry, the size of the device continues to shrink, and the memory will shrink to its physical limit. Especially after entering the 22nm technology node, it can no longer meet the needs of storage development. . Resistive RAM (RRAM) has become a strong competitor for next-generation memory because of its simple structure, high-density integration, low fabrication temperature, compatibility with CMOS backen...

AI Technical Summary

Problems solved by technology

However, silicon-based diodes are prepared at a high temperature, and metal oxide diodes are easily transformed into RRAM and lose their rectification characteristics.

In addition, the driving current of the diode is low, which cannot meet the requirements of RRAM devices, so it is necessary to propose a new structure to suppress the Sneak current

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