Method for forming coating on inner surface of polycrystalline silicon ingot casting crucible

A polycrystalline silicon and crucible technology is applied to form a coating on the inner surface of a crucible for polycrystalline silicon ingots, and in the field of crucibles for polycrystalline silicon ingots, it can solve the problems of coating erosion, easy falling off, and high energy consumption, and achieve the effect of saving energy

Inactive Publication Date: 2013-02-06
ZHENJIANG RENDE NEW ENERGY TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, there are still some problems with silicon nitride coatings in the prior art: 1) silicon nitride coatings are all formed by high temperature sintering, which makes energy consumption relatively high; 2) silicon nitride coatings are generally sprayed The method prepares silicon nitride powder into a coating, and the coating density is low, and it is easy to fall off before or durin

Method used

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  • Method for forming coating on inner surface of polycrystalline silicon ingot casting crucible
  • Method for forming coating on inner surface of polycrystalline silicon ingot casting crucible
  • Method for forming coating on inner surface of polycrystalline silicon ingot casting crucible

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Embodiment 1

[0027] A coating is formed on the inner surface of a quartz crucible according to the following steps, thereby obtaining a crucible for polysilicon ingot comprising a coating formed using the method according to the present invention

[0028] 1) Weigh 400g of silicon nitride powder, add 1600g of pure water to it, stir and disperse evenly to prepare a coating composition;

[0029] 2) Place the quartz crucible on the heating device, heat it to 80°C and keep it warm;

[0030] 3) the coating composition prepared in the above step 1) is used to make it form a coating with a thickness of 300 microns on the inner surface of the quartz crucible by a brushing method; before this, calculate the position of the silicon melt level , when painting, it is necessary to apply multiple times within the range of 50 mm above and below the liquid surface to make the coating here thicker, and the thickness after drying here is 500 microns;

[0031] 4) Dry the coated quartz crucible in an aerobic ...

Embodiment 2

[0033] Except that 20 g of methanol was added in step 1), and the drying temperature in step 4) was 100° C., a polysilicon casting containing a coating formed by the method according to the present invention was obtained in the same steps as in Example 1. Crucible for ingot.

Embodiment 3

[0035] Except that 15 g of acrylic acid was added in step 1), and the drying temperature in step 4) was 100° C., a polysilicon casting containing a coating formed by the method according to the present invention was obtained in the same steps as in Example 1. Crucible for ingot.

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Abstract

The invention relates to a method for forming a coating on the inner surface of a polycrystalline silicon ingot casting crucible, in particular to the method for forming the coating on the inner surface of the polycrystalline silicon ingot casting crucible without high-temperature sintering, and also relates to the polycrystalline silicon ingot casting crucible comprising the coating prepared by the method. Since a high-temperature sintering condition is not required in the method for forming the coating on the inner surface of the polycrystalline silicon ingot casting crucible, a large amount of energy can be saved; the effective weight ratio of the polycrystalline silicon cast ingot prepared by using the crucible is higher than that of the cast ingot prepared by the crucible prepared by using the conventional method, so that the production cost is reduced, and the production efficiency is increased.

Description

technical field [0001] The present invention relates to a method for forming a coating on the inner surface of a crucible for polysilicon ingot, especially a method for forming a coating on the inner surface of a crucible for polysilicon ingot without high temperature sintering. The invention also relates to a crucible for a polysilicon ingot comprising a coating formed using the method. Background technique [0002] The basic materials of crystalline silicon solar cells are polycrystalline silicon wafers and monocrystalline silicon wafers. Polycrystalline silicon wafers are cut from polycrystalline silicon ingots produced by directional solidification. The polysilicon directional solidification method is to melt the polysilicon raw material in a quartz crucible, and control the temperature gradient of the melt to solidify the silicon melt from bottom to top to obtain a polysilicon ingot with upward grain growth. [0003] The main component of the quartz crucible used for p...

Claims

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Application Information

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IPC IPC(8): B05D1/38B05D3/00C30B28/06C09D1/00
Inventor 孟涛姚玖洪
Owner ZHENJIANG RENDE NEW ENERGY TECH
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