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Method for cleaning wafer after deep silicon etching process

A technology for deep silicon etching and wafers, applied in cleaning methods and appliances, cleaning methods using liquids, chemical instruments and methods, etc., can solve problems such as inability to completely clean residual pollutants, achieve optimized cleaning, and improve reliability performance and reduce the failure rate

Active Publication Date: 2013-02-06
MEMSIC SEMICON WUXI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The technical problem to be solved by the present invention is that the existing method for cleaning the wafer after the deep silicon etching process cannot completely clean the defects of residual pollutants after etching. The present invention aims to provide a new method for cleaning deep silicon etching The post-processing wafer method can realize optimal cleaning of residual etching pollutants on the wafer, avoiding the structure on the wafer from being polluted by residual etching substances, thereby improving the reliability of the devices on the wafer and reducing the failure rate

Method used

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Embodiment Construction

[0018] Specific embodiments of the present invention will be described in detail below.

[0019] Since what the present invention relates to is a kind of method for cleaning wafers after the deep silicon etching process, the cleaning method is usually after the etching method, so in order to better illustrate this cleaning method involved in the present invention, we will start from etching The detailed description begins with the etching method. The specific application example is an embodiment of etching and releasing the MEMS suspension bridge structure on the wafer. However, it should be clear that the cleaning method involved in the present invention is not limited to cleaning wafers with MEMS suspended bridge structures that are etched and released, but is suitable for cleaning various wafers after etching processes, especially Used in conjunction with deep silicon etch methods.

[0020] Apply the cleaning method involved in the present invention to the embodiment of e...

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Abstract

The invention relates to a method for cleaning a wafer after a deep silicon etching process, which comprises the following steps: rinsing the wafer with a BOE and EG mixed solution, cleaning the wafer with a surfactant and spraying and drying the wafer, removing photoresist on the wafer, rinsing with BOE and EG and cleaning the wafer with deionized water. The cleaning method can realize the optimized cleaning of residue etching pollutant on the wafer and prevent the structure on the wafer from being polluted by the residue etching material, so as to improve the reliability of devices on the wafer and reduce the failure rate.

Description

technical field [0001] The invention relates to a method for cleaning a silicon semiconductor device, in particular to a method for cleaning a wafer after a deep silicon etching process. Background technique [0002] After the deep silicon etching process, a large amount of silicon particles and some polymers will remain inside the etched groove, which requires cleaning of the wafer. The existing cleaning process usually uses a mixed solvent of BOE (abbreviation of buffer oxide etch, which is made by mixing hydrofluoric acid and ammonium fluoride in different proportions) and EG (abbreviation of ethylene glycol, ethylene glycol) after degumming Rinse, then spray clean with deionized water. BOE will rinse off part of the polymer, and at the same time, the silicon wrapped in the polymer will be released. The polymer and the mobile silicon particles inside the etched groove will flow to the surface of the wafer together with the deionized water. These silicon particles are ea...

Claims

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Application Information

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IPC IPC(8): B08B11/00B08B3/00H01L21/02B81C1/00
Inventor 徐乃涛
Owner MEMSIC SEMICON WUXI
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