Etching solution and method for forming patterned multilayer metal layer
A multi-layer metal, etching solution technology, applied in chemical/electrolytic methods to remove conductive materials, semiconductor devices, etc., can solve the problems of accelerated decomposition reaction, explosion of etching system, unstable etching rate, etc., to achieve good stability, Small etch rate difference, effect of good metal etch rate
Inactive Publication Date: 2015-07-01
AU OPTRONICS CORP
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Problems solved by technology
The exothermic reaction will cause the temperature of the solution to rise, and the metal catalysis will accelerate the decomposition reaction and generate a large amount of oxygen. The high temperature and a large amount of oxygen will cause the etching system to explode.
[0005] In addition, copper process etching solutions also include persulfuric acid series (oxone) and peracetic acid series, but these two series also have unstable etching rates, easy decomposition and heat generation, additional stabilizers need to be added, and copper ions in the etching solution The more the impact on the etch rate, the greater the disadvantages
Furthermore, peracid series often need to be combined with fluoride, and the disadvantage of doping with fluoride is that the reuse of glass substrates is likely to cause surface damage and have a greater impact on the environment
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experiment example
[0045] To illustrate that the etching solution of the present invention has a good etching effect, an experimental example is used as an illustration here. Table 1 shows the composition of the experimental example. Table 2 shows the critical dimension deviation (Critical Dimension Bias, CD Bias) and inclination angle (Taper angle) of the formed metal wire after the etching solution of the experimental example is used to etch the multilayer metal layer. The multilayer metal layer is composed of Composition of copper-containing layer and molybdenum-containing layer.
[0046] Table I
[0047]
Weight percentage
5%
1%
15%
Ammonium acetate
1%
[0048] Table II
[0049] CD Bias
0.7μm
Taper angle
78°
[0050] It is known from Table 1 and Table 2 that the metal wires obtained by etching the multilayer metal layer with the etching solution of the experimental example have precise key dimensions and a good tilt an...
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An etching solution and a method for forming a patterned multilayer metal layer. The etching solution is used for etching to form the patterned multilayer metal layer. The etching solution includes divalent copper ions, ammonia, an ammonium phosphate solution and organic ammonium salt. A method of forming the patterned multilayer metal layer has also been proposed. Firstly, the aforementioned etching solution is provided. Next, the multilayered metal layer is formed on a substrate. Thereafter, the multilayered metal layer is etched by the etching solution to form the patterned multilayer metal layer. The etching solution of the present invention has good stability and does not produce oxygen during use. Further, when the patterned multilayer metal layer is formed by using the etching solution of the present invention, the difference of the etching rate of the etching solution for multilayered metal layer is small.
Description
Technical field [0001] The invention relates to an etching solution and a manufacturing method for forming a patterned metal layer, and more particularly to an etching solution for etching a multilayer metal layer and a manufacturing method for forming a patterned multilayer metal layer. Background technique [0002] At present, the process of thin film transistor liquid crystal display (TFT-LCD) is a trend of large size, high frequency drive, and high resolution. To meet this demand, the metal wires used in the process need to have finer line width, lower impedance and Better resistance to electromigration and other characteristics. The aluminum metal used in the traditional process has gradually been unable to meet the needs of large-size products due to its material characteristics. Compared with aluminum, copper has a lower electrical resistivity, lower thermal expansion coefficient, higher melting point, and higher thermal conductivity. And better resistance to electromigra...
Claims
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IPC IPC(8): C23F1/18H01L21/28H05K3/06
Inventor 林舒瑶曹智强吕婉婷
Owner AU OPTRONICS CORP