Heater of ingot furnace

Abstract

The invention discloses a heater of an ingot furnace. The heater is composed of a first electrode, a second electrode and a heat generating body located between the first electrode and the second electrode. Specifically, the heat generating body is in electric connection with the first electrode and the second electrode respectively; the first electrode and the second electrode are used for directly or indirectly connecting a power source so as to make an electric current formed in the heat generating body located between the first electrode and the second electrode; the heat generating body extends along a longitudinal direction and / or a radial direction to at least partially surround the lateral side and / or the end of a crucible, wherein the heat generating body is used for forming a temperature-grading thermal field. The heater itself has small geometric space occupation and light weight, can generate a temperature field in graded distribution, and can improve the crystal growth speed. In addition, the heater has good effects on seed crystal protection and planar solid-liquid interface providing in single-crystal-like ingotting technologies so as to enlarge a single-crystal region.

Description

technical field [0001] The invention belongs to the technical field of design and manufacture of an ingot furnace, and in particular relates to a heater for an ingot furnace. Background technique [0002] Solar photovoltaic power generation is one of the forms of sustainable energy utilization, and it has developed rapidly in various countries in recent years. At present, crystalline silicon solar cells are the most widely used, and crystalline silicon solar cells are mainly made of single crystal silicon wafers or polycrystalline silicon wafers. In the world's photovoltaic industry, polysilicon wafers occupy a dominant position in solar cells due to their high production capacity, low energy consumption, and low cost. The ingot furnace is the core manufacturing equipment for producing polysilicon ingots. [0003] Chinese patent application CN101775641A discloses the structure of a polycrystalline silicon ingot furnace, which includes a furnace chamber, a crucible placed in...

AI Technical Summary

Problems solved by technology

The production of ingot monocrystalline silicon is mainly through the following methods: lay a layer of 5-40mm single crystal seed crystal on the bottom of the quartz crucible when charging, and then fill the polycrystalline silicon raw material, protect the bottom seed crystal from being completely melted during the melting process, and then Single crystal silicon growth is carried out on the basis of unmelted seed crystals; the main difficulty of this method is to protect the seed crystals from incomplete melting during the melting process, however, in the production of existing ingot casting furnaces, when the thermal insulation cage is closed and the raw material is in the During the melting process, the temperature distribution in the thermal field is relatively uniform, and the seed crystal cannot be well protected

In addition, it is difficult to obtain a flat isothermal surface only by lifting the insulation cage. In practice, it is mostly a concave solid-liquid interface, which will lead to a gradual reduction of the quasi-single crystal region.

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