A SiC Junction Barrier Schottky Diode Device with Ladder Termination

Abstract

The invention discloses a silicon carbide junction barrier Schottky diode device with trapezoid terminals. The silicon carbide junction barrier Schottky diode device with trapezoid terminals are in a symmetrical structure and comprises an N+ type substrate, wherein an N type transitional epitaxial layer is arranged on the N+ type substrate, an N- type epitaxial layer is arranged on the N type transitional epitaxial layer, two P type node terminals and four P+ type body regions at equal intervals are arranged above the inner portion of the N- type epitaxial layer, inner edges of the two P type node terminals abuts against outer edges of two adjacent P+ type body regions, two field oxides and a metal layer are arranged on the outer surface of the N- type epitaxial layer, inner boundaries of the two P type node terminals are aligned to inner boundaries of the two field oxides respectively, two boundaries of the metal layer abut against inner boundaries of the two field oxides respectively, P type node terminals are in the trapezoid structure, and outer edges are longer than inner edges. By the aid of the structure, the electric field intensity distribution of a high field area can be optimized, so that the reverse characteristic of the device can be improved effectively, and the reliability of the device can be improved.

Description

technical field [0001] The invention mainly relates to the field of high-voltage power semiconductor devices, specifically, a silicon carbide junction barrier Schottky diode device with trapezoidal terminals, which is suitable for high-power rectification, inverter freewheeling, and power factor correction (PFC) systems . Background technique [0002] With the continuous improvement of people's living standards, electronic products continue to put forward new requirements for volume, performance, reliability and cost. However, many commercial power devices are approaching the theoretical limits limited by silicon materials, given their low ability to block high voltages. In this situation, silicon carbide technology came out. Silicon carbide has a series of properties superior to silicon, such as an order of magnitude higher breakdown electric field, three times the forbidden band width, and three times the thermal conductivity of silicon, which makes silicon carbide high-...

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Problems solved by technology

One way to improve the withstand voltage of power devices is to increase the thickness of the low-doped epitaxial layer, but this will increase the forward conduction resistance of the device, thereby increasing the forward voltage drop

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