High-voltage interconnection structure with practically-screened field plate

Abstract

The invention provides a high-voltage interconnection structure with a practically-screened field plate, belonging to the technical field of semiconductor power devices. The high-voltage interconnection structure is used for a runway type transverse power device with a high-voltage interconnection line, and comprises a double-layer part polycrystal screened field plate and a high-voltage interconnection line; the double-layer part polycrystal screened field plate is only stored in a surface layer of a device which is stridden by the high-voltage interconnection line, and the surface of the device which is not stridden by the high-voltage interconnection line is not provided with the polycrystal screened field plate; the double-layer part polycrystal screened field plate consists of a first-layer field plate and a second-layer field plate, wherein the second-layer field plate is arranged between the first-layer field plate and the high-voltage interconnection line; and the two layers of field plates are discontinuously distributed in the surface layer of the device, and the two layers of field plates are crisscross distributed with each other and are separated from each other by a proper distance. Compared with the conventional floating field plate structure with high-voltage interconnection, the high-voltage interconnection structure reduces the size of the device and increases the on state current capability of the device on the basis that the screen function of the floating field plate to the high-voltage interconnection line effect is not influenced, and the withstand voltage of the device is guaranteed.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, and relates to a high-voltage interconnection structure. Background technique [0002] Power ICs have made huge strides in communications, power management, motor control, and more, and will continue to receive wider attention. Power integrated circuits integrate high-voltage devices with low-voltage control circuits to bring a series of benefits, but also bring severe challenges to circuit design. [0003] With the increase of integration level and higher interconnection voltage requirements, the high voltage interconnection line with high potential (High voltage Interconnection, HVI for short) is crossing the lateral double-diffused metal oxide semiconductor field effect transistor LDMOS (Lateral Double-Diffused metal oxide semiconductor field effect transistor). MOSFET) and other high-voltage devices and the local area of ​​the surface of the isolation region will lead to ...

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a device for the adverse effect of the field plate on the surface of the device where no high-voltage interconnection line crosses over the device's lateral withstand voltage in the traditional high-voltage interconnection structure with floating field plates. High Voltage Interconnect Technology with Partial Field Plate Shielding

Images