A Partial Field Plate Shielded High Voltage Interconnect Structure

Abstract

The invention provides a high-voltage interconnection structure with a practically-screened field plate, belonging to the technical field of semiconductor power devices. The high-voltage interconnection structure is used for a runway type transverse power device with a high-voltage interconnection line, and comprises a double-layer part polycrystal screened field plate and a high-voltage interconnection line; the double-layer part polycrystal screened field plate is only stored in a surface layer of a device which is stridden by the high-voltage interconnection line, and the surface of the device which is not stridden by the high-voltage interconnection line is not provided with the polycrystal screened field plate; the double-layer part polycrystal screened field plate consists of a first-layer field plate and a second-layer field plate, wherein the second-layer field plate is arranged between the first-layer field plate and the high-voltage interconnection line; and the two layers of field plates are discontinuously distributed in the surface layer of the device, and the two layers of field plates are crisscross distributed with each other and are separated from each other by a proper distance. Compared with the conventional floating field plate structure with high-voltage interconnection, the high-voltage interconnection structure reduces the size of the device and increases the on state current capability of the device on the basis that the screen function of the floating field plate to the high-voltage interconnection line effect is not influenced, and the withstand voltage of the device is guaranteed.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices and relates to a high-voltage interconnection structure. Background technique [0002] Power integrated circuits have made tremendous progress in areas such as communication, power management, and motor control, and will continue to receive wider attention. The integration of high-voltage devices and low-voltage control circuits in power integrated circuits brings a series of benefits, but it also poses severe challenges to circuit design. [0003] With the increase of integration and higher interconnection voltage requirements, the high voltage interconnection (High voltage Interconnection, HVI) with high potential across the lateral double diffused metal oxide semiconductor field effect transistor LDMOS (Lateral Double- Diffused MOSFET) and other high-voltage devices and the partial area on the surface of the isolation region will lead to local concentration of electric forc...

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Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a device for the adverse effect of the field plate on the surface of the device where no high-voltage interconnection line crosses over the device's lateral withstand voltage in the traditional high-voltage interconnection structure with floating field plates. High Voltage Interconnect Technology with Partial Field Plate Shielding

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