Acoustic wave element

An elastic wave and component technology, applied in electrical components, impedance networks, etc., can solve problems such as increased insertion loss and poor conductivity.

Active Publication Date: 2013-02-27
SKYWORKS PANASONIC FILTER SOLUTIONS JAPAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, in such a conventional elastic wave device, Mo brings about a problem that the conductivity deteriorates and the insertion loss in the elastic wave device 1 increases.

Method used

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Experimental program
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Embodiment approach 1

[0066] Hereinafter, Embodiment 1 of the present invention will be described with reference to the drawings. figure 1 is a schematic cross-sectional view of the elastic wave device in Embodiment 1 (a schematic cross-sectional view perpendicular to the direction in which the IDT electrode fingers extend).

[0067] exist figure 1Among them, the elastic wave element 5 has: a piezoelectric body 6; an IDT electrode 7 provided on the piezoelectric body 6 and exciting a main elastic wave (Shear Horizontal wave, etc.) with a wavelength of λ; A silicon oxide film 8 covering the IDT electrode 7 and having a film thickness of not less than 0.20λ and less than 1λ. In addition, the wavelength λ of the main elastic wave is twice the electrode finger pitch. Furthermore, elastic wave element 5 includes dielectric thin film 9 provided on silicon oxide film 8 and propagating a transverse wave faster than the transverse wave propagating through silicon oxide film 8 . This elastic wave elemen...

Embodiment approach 2

[0104] Hereinafter, Embodiment 2 of the present invention will be described with reference to the drawings. Figure 8 It is a schematic cross-sectional view of an elastic wave device according to Embodiment 2 (a schematic cross-sectional view perpendicular to the direction in which the IDT electrode fingers extend). The same symbols are assigned to the same configurations as those in Embodiment 1, and description thereof will be omitted.

[0105] exist Figure 8 Among them, elastic wave element 5 does not include dielectric thin film 9 described in Embodiment 1, and is a surface wave element that distributes energy to the surface portion of piezoelectric body 6 or silicon oxide film 8 to excite main elastic waves.

[0106] The IDT electrode 7 has a total film thickness of 0.15λ or less, the first electrode layer 10 has a film thickness of 0.03λ or more, and the second electrode layer 11 has a film thickness of 0.025λ or more.

[0107] The film thickness of the silicon oxide ...

Embodiment approach 3

[0146] Hereinafter, Embodiment 3 of the present invention will be described with reference to the drawings. Figure 15 is a schematic cross-sectional view of the elastic wave device in Embodiment 3 (a schematic cross-sectional view perpendicular to the direction in which the IDT electrode fingers extend).

[0147] In Embodiment 3, the main difference from Embodiment 1 is that the main component of the first electrode layer 10 is W (tungsten).

[0148] Figure 15 Among them, the elastic wave element 5 is provided with: a piezoelectric body 6; an IDT electrode 7 provided on the piezoelectric body 6 and exciting a main elastic wave (ShearHorizontal wave, etc.) with a wavelength of λ; The IDT electrode 7 and the silicon oxide film 8 having a film thickness of not less than 0.20λ and not more than 0.50λ. Furthermore, elastic wave element 5 includes dielectric thin film 9 that is provided on silicon oxide film 8 and that propagates a transverse wave faster than a transverse wave p...

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Abstract

An IDT electrode comprises, in order from the piezoelectric body side, a first electrode layer having Mo as the main component, and a second electrode layer which is provided on the first electrode layer and which has Al as the main component thereof. The IDT electrode has a total film thickness of not more than 0.15[lambda], with the first electrode layer having a film thickness of at least 0.05[lambda] and the second electrode layer having a film thickness of at least 0.025[lambda].

Description

technical field [0001] The present invention relates to elastic wave elements. Background technique [0002] Figure 39 is a schematic cross-sectional view of an elastic wave element in the prior art. Conventionally, a unit in which silicon oxide film 4 is formed on piezoelectric body 2 so as to cover IDT electrode 7 has been proposed as means for improving the temperature characteristics of a filter using elastic wave element 1 . [0003] In addition, by using molybdenum (Mo) for the IDT electrode 7 , an electrode pattern can be formed by dry etching, and the electric resistance of the elastic wave device 1 can be improved. [0004] In addition, since Mo has a larger specific gravity than aluminum (Al), it is possible to form an IDT electrode having a film thickness 3 thinner than that of an Al electrode. Thereby, variation in the formation of the silicon oxide film 4 can be reduced. [0005] In addition, Patent Document 1 is known as a prior art document related to this...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/145H03H9/72
CPCH03H9/02559H03H9/0222H03H9/14541
Inventor 冈本庄司后藤令中西秀和中村弘幸
Owner SKYWORKS PANASONIC FILTER SOLUTIONS JAPAN
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