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Salt, photoresist composition and method for producing photoresist pattern

A technology of photoresist and composition, applied in the field of salt and photoresist composition, to achieve the effect of improving exposure latitude

Inactive Publication Date: 2013-03-06
SUMITOMO CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Such photoresist compositions that can provide photoresist patterns with improved exposure latitude remain to be improved

Method used

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  • Salt, photoresist composition and method for producing photoresist pattern
  • Salt, photoresist composition and method for producing photoresist pattern
  • Salt, photoresist composition and method for producing photoresist pattern

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0341]

[0342] In a mixture of 10 parts of a compound represented by formula (I-1-a) produced by OSAKAORGANICCEHMICALINDUSTRIES, Ltd. and 30 parts of chloroform, 11.3 parts of 50% 4-methylmorpholine N-oxide aqueous solution and 0.78 parts of a 4% aqueous solution of osmium tetroxide, and the resulting mixture was stirred at room temperature for 24 hours. To the reaction mixture was added 82 parts of a 5% aqueous oxalic acid solution, followed by extraction with chloroform, followed by separation into a chloroform layer. After the chloroform layer was washed with deionized water, it was concentrated under reduced pressure to obtain 13.22 parts of the compound represented by the formula (I-1-b).

[0343] 1 H-NMR (DMSO-d 6 ): δ=4.8-4.7(1H, s), 4.7-4.6(1H, m), 3.5-3.3(2H, m), 2.2-1.9(9H, m), 1.7-1.5(6H, m), 1.1 (3H, s)

[0344] To a mixture of 6 parts of the compound represented by the formula (I-1-c) (the compound was produced by the method described in JP2008-127367A) an...

Embodiment 2

[0349]

[0350] To a mixture of 10 parts of a compound represented by formula (I-6-a) produced by Idemitsu Kosan Co., Ltd. and 30 parts of chloroform, 10.7 parts of 50% 4-methylmorpholine N-oxide solution and 0.73 parts of 4% osmium tetroxide in water. The resulting mixture was stirred at room temperature for 24 hours. To the resulting reaction mixture, 77 parts of a 5% aqueous oxalic acid solution was added, and extracted with chloroform, followed by separation into a chloroform layer. The chloroform layer was washed with deionized water, after which it was concentrated under reduced pressure to obtain 13.92 parts of the compound represented by formula (I-6-b).

[0351] 1 H-NMR (DMSO-d 6 ): δ=5.0-4.8 (1H, m), 4.8-4.6 (1H, m), 3.5-3.2 (2H, m), 2.5-2.4 (2H, m), 2.3-2.2 (7H, m), 2.0 -1.7(4H, m), 1.1(3H, s)

[0352] To a mixture of 6 parts of the compound represented by formula (I-6-c) and 30 parts of chloroform, 2.33 parts of 1,1'-carbonyldiimidazole was added, after whi...

Embodiment 3

[0357]

[0358] To a mixture of 10 parts of the compound represented by the formula (I-20-a) produced by Idemitsu Kosan Co., Ltd. and 30 parts of chloroform, 9.5 parts of 50% 4-methylmorpholine N-oxide solution and 0.65 parts of 4% osmium tetroxide in water. The resulting mixture was stirred at room temperature for 24 hours. To the resulting reaction mixture, 70 parts of a 5% aqueous oxalic acid solution was added, followed by extraction with chloroform, followed by separation into a chloroform layer. After the chloroform layer was washed with deionized water, it was concentrated under reduced pressure to obtain 11.53 parts of the compound represented by the formula (I-20-b).

[0359] 1 H-NMR (DMSO-d 6 ): δ=5.0-4.2 (1H, m), 3.6-3.4 (2H, m), 2.6-2.5 (2H, m), 2.5-2.4 (1H, m), 2.1-1.4 (12H, m), 1.2 (3H, s), 1.0-0.9 (6H, m)

[0360] To a mixture of 6 parts of the compound represented by formula (I-20-c) and 30 parts of chloroform, 2.33 parts of 1,1'-carbonyldiimidazole was...

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Abstract

The invention provides a salt, photoresist composition and a method for producing photoresist pattern.A photoresist composition which comprises a salt represented by formula (I): wherein Q1 and Q2 each independently represent a fluorine atom or a C1-C6 perfluoroalkyl group, R1, R2 and R3 each independently represent a hydrogen atom or a C1-C10 monovalent aliphatic saturated hydrocarbon group, X1 and X2 each independently represent a single bond, a carbonyl group, or a C1-C10 divalent aliphatic saturated hydrocarbon group where a hydrogen atom can be replaced by a hydroxy group and where a methylene group can be replaced by an oxygen atom, a sulfonyl group or a carbonyl group, A1 represents a C1-C30 organic group, m1 represents an integer of 1 to 4, and Z+ represents an organic cation, and a resin which is hardly soluble or insoluble but soluble in an aqueous alkali solution by action of an acid.

Description

technical field [0001] The present invention relates to a salt, a photoresist composition and a method for preparing a photoresist pattern. Background technique [0002] A photoresist composition for semiconductor microfabrication using a photolithography process includes a resin having an acid-labile group and an acid generator. [0003] US2008 / 166660A mentions a photoresist composition comprising a resin having an acid labile group and a structural unit represented by formula (I); [0004] [0005] and salts represented by formula (II). [0006] [0007] As design dimensions in fine processing of semiconductors become smaller and smaller, there is a need for a photoresist composition that can provide a photoresist pattern with improved exposure latitude, that is, a photoresist composition that can be used even when used A photoresist composition having a photoresist pattern with less dimensional variation can also be provided in the case of varying the exposure amo...

Claims

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Application Information

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IPC IPC(8): C07C309/17C07C303/32C07C381/12C07D327/08C07D327/06C07D333/46C07D335/02C07D307/33C07D307/00C07C25/18C07C17/35G03F7/004G03F7/00
CPCC07C381/12C07C2103/74C07C309/17C07C2603/74G03F7/0045G03F7/0046G03F7/0382G03F7/26C07C309/08G03F7/20
Inventor 增山达郎向井优一
Owner SUMITOMO CHEM CO LTD
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