Electrostatic chuck and semiconductor/liquid crystal manufacturing equipment
An electrostatic chuck and manufacturing device technology, which is applied in semiconductor/solid-state device manufacturing, electrostatic attraction holding device, positioning device, etc., can solve the problems of lower pass rate, worse production efficiency, lower throughput, etc., and achieve Ensure the uniformity of temperature, improve production efficiency, and improve the effect of pass rate
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Example
[0041] (First embodiment)
[0042] image 3 Is a cross-sectional view showing the electrostatic chuck of the first embodiment, Figure 4 It is a plan view showing the electrostatic chuck of the first embodiment.
[0043] Such as image 3 As shown, the electrostatic chuck 1 of the first embodiment includes a substrate 20 and a chuck function portion 10, and the chuck function portion 10 is adhered to the substrate 20 by an adhesive 26 such as silicone resin.
[0044] The substrate 20 is formed of, for example, a metal such as aluminum, and has a cooling water passage 22 as a cooling mechanism. The chuck function unit 10 is formed of ceramics such as alumina, for example, and includes a plurality of chuck regions R on which wafers (adsorbed objects) are placed on the surface.
[0045] In each chuck region R, an air hole 30 for supplying heat transfer gas and a recessed portion 32 communicating with the air hole 30 and extending in the horizontal direction are provided on the surface, an...
Example
[0070] (Second embodiment)
[0071] Image 6 It is a cross-sectional view showing the electrostatic chuck of the second embodiment.
[0072] Of the first embodiment above image 3 The electrostatic chuck 1 has a structure that does not provide heat transfer gas between the tray 50 and the electrostatic chuck 1. The second embodiment is characterized in that even if the heat transfer gas is supplied between the tray and the electrostatic chuck, the cooling efficiency can be improved. in Image 6 The same elements as those in the first embodiment are given the same reference numerals, and detailed descriptions thereof are omitted.
[0073] Such as Image 6 As shown, in the electrostatic chuck 1a of the second embodiment, the surface of the recessed surface portion C on which the tray 50 is arranged is also provided with an air hole 30a for supplying heat transfer gas and a recess 32a communicating with the air hole 30a. The air hole 30a of the concave surface portion C is provided as...
Example
[0076] (Third Embodiment)
[0077] Figure 7 It is a cross-sectional view showing the electrostatic chuck of the third embodiment. in Figure 7 The same elements as those in the first embodiment are given the same reference numerals, and detailed descriptions thereof are omitted.
[0078] Such as Figure 7 As shown in the electrostatic chuck 1b, it can be separated into a gas path L1 including air holes 30 for supplying heat transfer gas to the wafer 2 and a gas path L2 including air holes 30a for supplying heat transfer gas to the tray 50, which are independent of each other. line.
[0079] In this way, the flow rate and gas pressure of the heat transfer gas can be independently adjusted between the wafer 2 and the tray 50, and therefore the cooling efficiency can be changed between the wafer 2 and the tray 50. For example, in order to achieve etching characteristics or stabilization of transportation, when the tray 50 needs to be cooled more actively than the wafer 2, it can be e...
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