Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Electrostatic chuck and semiconductor/liquid crystal manufacturing equipment

An electrostatic chuck and manufacturing device technology, which is applied in semiconductor/solid-state device manufacturing, electrostatic attraction holding device, positioning device, etc., can solve the problems of lower pass rate, worse production efficiency, lower throughput, etc., and achieve Ensure the uniformity of temperature, improve production efficiency, and improve the effect of pass rate

Active Publication Date: 2013-03-06
SHINKO ELECTRIC IND CO LTD
View PDF4 Cites 22 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] Therefore, in the wafer, the temperature of the peripheral portion becomes high, and in the wafer, the etching characteristics vary, which becomes a factor leading to a decrease in the yield.
In addition, when the pallet becomes hot, it is easy to cause transportation problems
Therefore, it is necessary to wait until the tray is cooled, so there is a problem that the throughput decreases and the production efficiency deteriorates

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electrostatic chuck and semiconductor/liquid crystal manufacturing equipment
  • Electrostatic chuck and semiconductor/liquid crystal manufacturing equipment
  • Electrostatic chuck and semiconductor/liquid crystal manufacturing equipment

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment approach

[0042] image 3 is a sectional view showing the electrostatic chuck according to the first embodiment, Figure 4 It is a plan view showing the electrostatic chuck of the first embodiment.

[0043] Such as image 3 As shown, the electrostatic chuck 1 of the first embodiment includes a substrate 20 and a chuck function part 10 bonded to the substrate 20 with an adhesive 26 such as silicone resin.

[0044] The substrate 20 is formed of metal such as aluminum, for example, and a cooling water channel 22 is provided inside as a cooling mechanism. The chuck function part 10 is formed of ceramics such as alumina, for example, and has a plurality of chuck regions R on which wafers (attracted objects) are placed on the surface.

[0045] In each chuck region R, a gas hole 30 for supplying heat transfer gas and a concave portion 32 communicating with the gas hole 30 and extending in the horizontal direction are provided on the surface, and a plurality of convex portions are arranged i...

no. 2 Embodiment approach

[0071] Figure 6 It is a sectional view showing the electrostatic chuck according to the second embodiment.

[0072] of the above-mentioned first embodiment image 3 The electrostatic chuck 1 has a structure in which heat transfer gas is not supplied between the tray 50 and the electrostatic chuck 1 . The second embodiment is characterized in that cooling efficiency can be improved even if heat transfer gas is supplied between the tray and the electrostatic chuck. exist Figure 6 In the description, the same reference numerals are assigned to the same elements as those in the first embodiment, and detailed description thereof will be omitted.

[0073] Such as Figure 6 As shown, in the electrostatic chuck 1a of the second embodiment, the air hole 30a for supplying the heat transfer gas and the recessed portion 32a communicating with the air hole 30a are also provided on the surface where the concave portion C of the tray 50 is disposed. The air hole 30 a of the concave po...

no. 3 Embodiment approach

[0077] Figure 7 It is a sectional view showing the electrostatic chuck according to the third embodiment. exist Figure 7 In the description, the same reference numerals are assigned to the same elements as those in the first embodiment, and detailed description thereof will be omitted.

[0078] Such as Figure 7 Like the electrostatic chuck 1b shown, the gas path L1 including the gas hole 30 for supplying the heat transfer gas to the wafer 2 and the gas path L2 including the gas hole 30a for supplying the heat transfer gas to the tray 50 can be separated into independent from each other. line.

[0079] In this way, since the flow rate and gas pressure of the heat transfer gas can be adjusted independently between the wafer 2 and the tray 50 , the cooling efficiency can be changed between the wafer 2 and the tray 50 . For example, when it is necessary to cool the tray 50 more aggressively than the wafer 2 in order to realize the etching characteristic or the stability of ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an electrostatic chuck and semiconductor / liquid crystal manufacturing equipment. The subject of the invention is to raise reliability by configuring an electrostatic chuck for transporting chip trays in a plurality of chuck regions and in a concave surface portion arranged in an outside area. An electrostatic chuck includes, a chuck function portion including a plurality of chuck regions (10) on which an attractable object is placed respectively, and a concave surface portion (C) provided in an outer region of the chuck regions (R), and electrodes (40, 40a) arranged in an inner part of the chuck function portion corresponding to the chuck regions (R) and an inner part of the chuck function portion (10) corresponding to the concave surface portion (C), respectively.

Description

technical field [0001] The present invention relates to an electrostatic chuck used in a mechanism for attracting objects to be adsorbed such as a wafer, and a semiconductor / liquid crystal manufacturing apparatus having the electrostatic chuck. Background technique [0002] Conventionally, semiconductor manufacturing equipment such as dry etching equipment and CVD equipment used in semiconductor wafer processing etc. have been equipped with electrostatic chucks for mounting wafers by electrostatic attraction in order to control the temperature of wafers in various processes. [0003] For example, a dry etching apparatus includes a cooled electrostatic chuck so that the wafer temperature does not rise above a predetermined temperature due to plasma processing, and the wafer is cooled so that the wafer temperature is balanced at a certain temperature. [0004] 【Patent Document 1】 [0005] Japanese Patent Laid-Open No. 2005-64460 [0006] 【Patent Document 2】 [0007] Japanes...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/683H01J37/32
CPCH01J37/32788H01L21/67109H01J37/32724H01L21/68771H01J37/32779H01J37/32733H01L21/68785H01L21/6831H01J37/32715B23Q3/15H01L21/683H02N13/00
Inventor 白岩则雄
Owner SHINKO ELECTRIC IND CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com