Trench type metal oxide semiconductor device and manufacturing method thereof

Abstract

The invention discloses a trench metal oxide semiconductor (trench-gate metal oxide semiconductor, TMOS) element and a manufacturing method thereof. The trench metal oxide semiconductor includes: a substrate, a gate dielectric layer, a gate electrode and a source / drain. The substrate has a first doped region, a second doped region, and at least one groove; and the first doped region and the second doped region form a P / N junction; the groove extends from the surface of the substrate through the second doped The impurity region and the P / N junction enter into the first doped region. A gate dielectric layer is on sidewalls of the trench. The gate electrode is located in the gate trench, and the height difference between the upper surface of the gate electrode and the substrate surface is substantially smaller than that of the source / drain electrodes in the substrate, and is adjacent to the gate dielectric layer.

Description

technical field [0001] The present invention relates to a semiconductor element and its manufacturing method, and in particular to a trench type metal-oxide-semiconductor element and its manufacturing method. Background technique [0002] The feature of the trench-gate metal oxide semiconductor (TMOS) field effect transistor is that the gate structure is embedded in an etched trench in a semiconductor epitaxial layer. Since the carrier drift path (drift path) of this field effect transistor is formed along the sidewall of the trench, the channel length (channel length) of the field effect transistor can be greatly increased, thereby greatly reducing the resistance value of the characteristic channel (About 30% reduction). Therefore, under the same operating current, it not only helps to reduce static power loss, but also improves the current density of the device, and can improve the shortcomings of traditional planar channel field effect transistors that cannot simultaneou...

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Problems solved by technology

[0003] However, with the increasing complexity of integrated circuits, the development of trench gate metal oxide semiconductor field effect transistors still has its limits. The continuous improvement of circuit integration and the development needs of diversified functions, and reduce manufacturing costs

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