Method for fabricating nanoscale column array GaN-based normal-structured light emitting diode

Abstract

The invention discloses a method for fabricating a nanoscale column array GaN-based normal-structured light emitting diode, which includes the steps of: sequentially growing n-type GaN layer, a quantum well layer and a p-type GaN layer on unintentionally doped GaN layers which are sequentially grown on a sapphire substrate; depositing a PS(Poly Styrene) crystal layer on the p-type GaN layer; depositing a SiO2 layer; firing under high temperature to obtain neat nanoscale pores at the position of the PS crystal layer; depositing a metal layer; etching off the SiO2 layer and the metal layer; etching downward on the p-type GaN layer to form nanoscale GaN column arrays; filling insulating material among the nanoscale GaN column arrays, removing part of the insulating material among the nanoscale GaN column arrays to expose the p-type GaN layers in the nanoscale GaN column arrays and form a nanoscale column LED(Light Emitting Diode) chip; plating a transparent conductive layer on the surface of the chip through vapor deposition; fabricating an N electrode board at one side of each nanoscale GaN column array, fabricating N metal electrodes on the N electrode boards, and fabricating P metal electrodes on the upsides of the nanoscale GaN column arrays; and scribing and encapsulating splinters to finish the preparation process.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a method for manufacturing a gallium nitride light-emitting diode array with a nanoscale columnar formal structure. Background technique [0002] GaN-based light-emitting diodes are widely used in indoor lighting, traffic lights, TVs, mobile phones, liquid crystal display backlights, street lights, etc. Among them, how to replace traditional lighting tools such as fluorescent lamps and incandescent lamps as a new generation of green light sources is It is the most promising research topic in its application. At present, the luminous efficiency of light-emitting diodes still needs to be further improved, which is determined by the internal quantum efficiency and light extraction efficiency. Among them, the internal quantum efficiency of the blue LED can reach more than 70%, so how to improve the light extraction efficiency is particularly critical. [0003] The factors af...

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Problems solved by technology

However, general wet etching is not easy to control the size and depth of coarsening. Therefore, how to realize the size control of coarsening and develop to a finer size has become a major problem.

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