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Aluminum grid and preparation method thereof as well as thin film transistor with aluminum grid

A technology of aluminum thin film and aluminum gate, which is applied to transistors, semiconductor devices, electrical components, etc., can solve the problems of easy corrosion and easy generation of hillocks on aluminum gates, and achieves the effects of easy implementation, small delay time, and low resistance.

Active Publication Date: 2013-03-20
CHENGDU VISTAR OPTEOLECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] For this reason, what the present invention is to solve is the technical problem that the aluminum gate is prone to hillocks and corrosion in the prior art, and then provides an aluminum gate and its preparation method and a thin film transistor comprising the aluminum gate

Method used

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  • Aluminum grid and preparation method thereof as well as thin film transistor with aluminum grid
  • Aluminum grid and preparation method thereof as well as thin film transistor with aluminum grid
  • Aluminum grid and preparation method thereof as well as thin film transistor with aluminum grid

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Embodiment 1

[0050] Such as figure 1 As shown, this embodiment provides an aluminum gate, including an aluminum gate body formed on a substrate; a first cover layer 1 disposed on the upper surface of the aluminum gate body opposite to the substrate; It also includes a second cover layer 7 wrapped around the aluminum gate body, and the second cover layer 7 is seamlessly connected with the first cover layer 1; the first cover layer 1 and the The second cover layer 7 is made of metal with thermal expansion coefficient less than 20. The aluminum gate body in this embodiment is completely covered by the first capping layer 1 and the second capping layer 7. Since the thermal expansion coefficient of the metal is small, it is not easy to be thermally expanded. Therefore, under high-temperature processes, such as LTPS (low temperature polysilicon ) in the activation process, the process temperature is as high as 450°C, the compressive stress in the aluminum film is absorbed by the metal cap laye...

Embodiment 2

[0062] On the basis of embodiment 1, the present embodiment also includes the following steps:

[0063] S4, forming a gate pattern on the metal layer, etching away the metal layer outside the gate pattern, to obtain the first capping layer 1 covering the upper surface of the aluminum gate body and covering the aluminum gate body. The second cover layer 7 around the gate body; the etching method is dry etching or wet etching.

[0064] Similar to Embodiment 1, in this embodiment, a gate pattern is formed on the metal layer by photolithography. Moreover, during photolithography, the critical dimension of the photomask is controlled to be smaller than the critical dimension of the aluminum gate. In this embodiment, keep the exposure energy 100-110mj / cm2 and the photoresist thickness 1400-1600nm unchanged, and the exposure time is 350-450ms. Preferably, keep the exposure energy 100mj / cm2 and the photoresist thickness 1400nm unchanged, and the exposure time is 350ms.

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Abstract

The invention discloses an aluminum grid, a preparation method of the aluminum grid, and a thin film transistor with the aluminum grid. The aluminum grid comprises an aluminum grid body and a cover layer covering the outer surface and the side walls of the aluminum grid body, wherein the cover layer is made of a metal with the thermal expansion coefficient less than 20. As the metal cover layer is made of the metal with the thermal expansion coefficient less than 20, the aluminum grid is unlikely to expand in high temperature; when the aluminum grid body is subjected to expansion, the compression stress generated is absorbed by the metal cover layer, so that phenomena of hillock and corrosion on the surface or the surface and the side walls of the aluminum grid body are prevented, and the grid, the source, the drain and the lead of the aluminum grid are prevented from short-circuit.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an aluminum gate, a preparation method thereof and a thin film transistor comprising the aluminum gate. Background technique [0002] The speed of signal transmission in the Flat Panel Display (FPD) circuit depends on the resistance (R) (mainly refers to the gate resistance of the thin film transistor used in the flat panel display) and capacitance (C) The larger the RC product, the slower the speed, on the contrary, the smaller the RC product, the faster the signal transmission speed. As the size of the display screen increases, the grid wire will be longer, and the length of the grid wire will increase the resistance of the grid wire, thereby increasing the delay time of the RC circuit; similarly, as the resolution of the display screen increases, The gate wire becomes thinner, and the thinner gate wire also increases the resistance of the gate wire, thereb...

Claims

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Application Information

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IPC IPC(8): H01L29/49H01L21/28H01L29/786
Inventor 蔡世星邱勇黄秀颀平山秀雄李建文习王峰郭瑞
Owner CHENGDU VISTAR OPTEOLECTRONICS CO LTD
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