Aluminum grid and preparation method thereof as well as thin film transistor with aluminum grid
A technology of aluminum thin film and aluminum gate, which is applied to transistors, semiconductor devices, electrical components, etc., can solve the problems of easy corrosion and easy generation of hillocks on aluminum gates, and achieves the effects of easy implementation, small delay time, and low resistance.
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Example Embodiment
[0049] Example 1:
[0050] like figure 1 As shown, this embodiment provides an aluminum gate, including an aluminum gate body, which is formed on a substrate; a first cap layer 1 is disposed on the upper surface of the aluminum gate body at a position opposite to the substrate; It also includes a second capping layer 7 surrounding the aluminum gate body, and the second capping layer 7 and the first capping layer 1 are seamlessly connected; the first capping layer 1 and the The second cover layer 7 is made of metal with a coefficient of thermal expansion less than 20. The aluminum gate body in this embodiment is completely covered by the first capping layer 1 and the second capping layer 7. Since the thermal expansion coefficient of the metal is small, it is not easy to be thermally expanded. Therefore, under the high temperature process, such as LTPS (low temperature polysilicon In the activation process in ), the process temperature is as high as 450 ℃, the compressive str...
Example Embodiment
[0061] Embodiment 2:
[0062] On the basis of Embodiment 1, this embodiment also includes the following steps:
[0063] S4, forming a gate pattern on the metal layer, etching away the metal layer outside the gate pattern, to obtain a first capping layer 1 covering the upper surface of the aluminum gate body and covering the aluminum gate body The second cap layer 7 around the gate body; the etching method is dry etching or wet etching.
[0064] Similar to Embodiment 1, in this embodiment, a gate pattern is formed on the metal layer by photolithography. Also, during photolithography, the control mask critical dimension is smaller than the aluminum gate critical dimension. In this embodiment, the exposure energy is 100-110mj / cm2 and the photoresist thickness is 1400-1600nm unchanged, and the exposure time is 350-450ms. Preferably, the exposure energy of 100 mj / cm 2 and the thickness of the photoresist of 1400 nm are kept unchanged, and the exposure time is 350 ms.
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