High-gain wideband low-noise amplifier

A broadband low-noise, amplifier technology, used in high-frequency amplifiers, improving amplifiers to improve efficiency, improving amplifiers to reduce noise effects, etc. and other issues to achieve the effect of increasing design flexibility, design and application flexibility, and high gain

Active Publication Date: 2013-03-20
NANJING QINHENG MICROELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The first is the low gain. The gain of the traditional common-gate structure amplifier largely depends on the load impedance, but the large load resistance will bring too much voltage drop, and the limited power supply voltage limits the traditional common-gate structure amplifier. gain
[0005] The second is the large noise, the noise figure of the traditional common gate structure amplifier is relatively large, often exceeding 4dB
[0006] The third is the lack of flexibility in design applications
At the same time, after the input matching is completed, the transconductance of the input tube is also determined, and the design lacks flexibility.
Moreover, it can only be used in differential signal occasions, and cannot be applied in single-ended signal occasions

Method used

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Embodiment Construction

[0026] see image 3 , the present invention is provided with high-frequency choke unit, load unit and the first input amplifying unit and the second input amplifying unit, the radio frequency input signal RFin is respectively connected to the input end of two input amplifying units, the output end of the first input amplifying unit will The amplified signal is input to the second input amplifying unit, the output end of the second input amplifying unit is connected to the load unit, and the load unit outputs the radio frequency output signal RFout, and the input end of the second input amplifying unit is also connected in series with a high-frequency choke unit and grounded.

[0027] Figure 4 for image 3 specific circuit. The first input amplifying unit is provided with NMOS transistor M1, resistors R1, R2, capacitors C1, C2; the second input amplifying unit includes NMOS transistor M2, resistor R3, the load unit is resistor R4, and the high frequency choke unit is inducto...

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Abstract

The invention relates to a high-gain wideband low-noise amplifier, which is characterized in that an active transconductance enhancing circuit is adopted, a high-frequency choke unit, a load unit, a first input amplification unit and a second input amplification unit are arranged, a radio-frequency input signal is respectively connected with the input ends of the first input amplification unit and the second input amplification unit, the output end of the first input amplification unit outputs the amplified signal to the second input amplification unit, the output end of the second input amplification unit is connected with the load unit, the load unit outputs a radio-frequency output signal, and the input end of the second input amplification unit is serially connected with the high-frequency choke unit and then is grounded.

Description

technical field [0001] The invention relates to a high-gain broadband low-noise amplifier, which belongs to the technical field of radio frequency circuits. Its design structure is simple, it has a large input-output matching bandwidth, and at the same time, it improves the performance of noise and gain. Good input impedance matching performance, high gain and small noise figure at the same time. Background technique [0002] A low noise amplifier is an amplifier with a very low noise figure. It is generally used as a high frequency or intermediate frequency preamplifier for various radio receivers and an amplifying circuit for high-sensitivity electronic detection equipment. It is essential for almost all radio frequency receiver systems. One module is the low noise amplifier. Since the amplitude of the radio frequency signal received by the system is usually very weak, the noise of the amplifier itself may seriously interfere with the signal. Therefore, it is desirable to...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/26H03F1/02H03F3/189
Inventor 李智群陈亮
Owner NANJING QINHENG MICROELECTRONICS CO LTD
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