Resistor and production method thereof

A manufacturing method and resistance technology, applied in circuits, electrical components, electrical solid devices, etc., can solve problems such as poor operating performance, low resistance and lossless layer effect, improve stability and electrical performance, increase material The effect of selecting and improving process tolerance

Active Publication Date: 2013-03-27
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The metal gate has the advantages of low resistance and lossless layer effect, which can improve the disadvantages of poor operating performance caused by the use of high-resistance polysilicon materials for traditional gates.

Method used

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  • Resistor and production method thereof
  • Resistor and production method thereof
  • Resistor and production method thereof

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Embodiment Construction

[0025] see Figure 1 to Figure 8 , Figure 1 to Figure 8 It is a schematic diagram of a preferred embodiment of a method for manufacturing a transistor with a metal gate and a resistor provided by the present invention. Such as figure 1 As shown, this preferred embodiment firstly provides a substrate 100, on which a transistor region 102 and a resistor region 104 are defined; a plurality of shallow trench isolations (shallow trench isolation, STI) for providing electrical isolation are formed in the substrate 100 106. And if figure 1 As shown, the resistive area 104 includes an STI 106 used as a location for resistive elements. Next, a dielectric layer 107 , a polysilicon layer 108 , and a patterned hard mask 110 are sequentially formed on the substrate 100 , and the patterned hard mask 110 is used to define gate positions of transistor elements and formation positions of resistor elements. Wherein, the dielectric layer 107 formed between the substrate 100 and the polysil...

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Abstract

The invention discloses a resistor and a production method of the resistor and a transistor with a metal gate. The production method includes: firstly, providing a substrate, and defining a transistor region and a resistor region on the substrate; secondly, forming the transistor with a dummy gate and the resistor in the transistor region and the resistor region respectively; thirdly, removing the dummy gate and part of the resistor so as to form a first trench and two second trenches in the transistor and the resistor respectively, and forming at least one high dielectric constant gate dielectric layer in each of the first trench and the second trenches; and finally, forming the metal gate and metal structures in the first trench and the second trenches respectively.

Description

technical field [0001] The present invention relates to a resistor and a manufacturing method thereof, in particular to a resistor integrated with a transistor with a metal gate and a manufacturing method thereof. Background technique [0002] In the semiconductor industry, in order to improve the operating efficiency of transistors, there have been methods of using metals as transistor control gates. The metal gate has the advantages of low resistance and lossless layer effect, which can improve the disadvantages of poor operating performance caused by the use of high-resistance polysilicon material for the traditional gate. Metal gates can be broadly divided into gate first and gate last processes. The gate last process conforms to the thermal budget of metal materials and can provide a wider selection of materials. Gradually replacing the gate-front process. [0003] In addition, in integrated circuits, it is often necessary to add resistors and other circuit components...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/8234H01L27/105
Inventor 杨杰甯徐世杰林俊贤王尧展白启宏曾纪升
Owner UNITED MICROELECTRONICS CORP
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