Unlock instant, AI-driven research and patent intelligence for your innovation.

Method of manufacturing carbon nanotube, monocrystal substrate for manufacturing carbon nanotube, and carbon nanotube

A technology of carbon nanotubes and single-walled carbon nanotubes, which is applied in the directions of single crystal growth, nanotechnology, single crystal growth, etc., can solve problems such as the inability to produce devices with ideal performance in output

Inactive Publication Date: 2013-03-27
THE UNIV OF TOKYO +1
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This results in the inability to produce devices with desirable properties in sufficient yield

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method of manufacturing carbon nanotube, monocrystal substrate for manufacturing carbon nanotube, and carbon nanotube
  • Method of manufacturing carbon nanotube, monocrystal substrate for manufacturing carbon nanotube, and carbon nanotube
  • Method of manufacturing carbon nanotube, monocrystal substrate for manufacturing carbon nanotube, and carbon nanotube

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0092] Embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0093] First, the effect of etching treatment on SWNTs on R-cut substrates was studied. Figure 15 The SEM photographs shown are used to illustrate the effect of etching-treated single-walled carbon nanotubes on R-cut substrates, where Figure 15 a shows the SEM image of the unetched R-cut substrate. Figure 15 b shows the SEM picture of the etched R-cut substrate.

[0094] as from Figure 15 From a and b, it can be seen that after etching, the orientation of SWNTs is improved. Based on the comparison of the SEM photographs, it has been confirmed that a relatively large number of polishing marks are formed in the unetched R-cut substrate, while a relatively small amount of polishing marks are formed in the etched R-cut substrate. Correspondingly, the orientation of SWNTs is expected to be improved due to the reduced number of polishing marks. In oth...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
diameteraaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

An R-cut substrate is prepared by cutting from Lumbered synthetic quartz crystal in a plane parallel to the R plane. The R plane, which is the smoothest plane in crystal structure, accounts for most of the surface of the R-cut substrate obtained as above, and the m-plane and the r-plane lightly appear in the surface of the R-cut substrate in directions parallel to the X-axis during processing. After placing catalyst metal on the surface of the R-cut substrate, carbon containing gas is supplied to the surface of the R-cut substrate, and carbon nanotubes are grown along the lattice structure of the crystal using the catalyst metal as a core. With this, carbon nanotubes having excellent orientation and linearity can be manufactured.

Description

technical field [0001] The invention relates to a method for preparing carbon nanotubes, a single crystal substrate for preparing carbon nanotubes and carbon nanotubes. Background technique [0002] There are two types of carbon nanotubes (CNTs): single-walled carbon nanotubes (SWNTs) and multi-walled carbon nanotubes (MWNTs). Single-walled carbon nanotubes are formed from a layer of cylindrically closed graphite sheets; Carbon nanotubes are formed from a large number of cylindrically coaxially stacked graphite sheets. Both types of carbon nanotubes have a fine structure with a diameter of about one nanometer to tens of nanometers and a length of about several micrometers to hundreds of micrometers. Single-walled carbon nanotubes or multi-walled carbon nanotubes form eg isolated carbon nanotubes or bundled carbon nanotubes, depending eg on the method of preparing the carbon nanotubes. Since carbon nanotubes exhibit special properties of high electrical conductivity and sem...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/02C23C16/26C30B29/02C30B29/66
CPCB82Y40/00C01B31/0233B82Y30/00C01B32/162Y10T428/24612Y10T428/24479
Inventor 丸山茂夫千足昇平岡部宽人寺泽正己河野修一佐藤忠
Owner THE UNIV OF TOKYO