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Zinc oxide piezoresistor material and preparation method

A varistor, zinc oxide technology, applied in the direction of varistor, varistor core, etc., can solve the problems of high cost, increased cost of varistor, limited sintering temperature, etc.

Inactive Publication Date: 2014-04-16
SHENZHEN SUNLORD ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The general sintering temperature of zinc oxide varistor ceramics is 1100-1500°C, while chip varistors are limited in their sintering temperature due to the addition of internal electrodes inside the ceramic body.
The internal electrode metals generally used are platinum, palladium, silver-palladium alloy or pure silver. Among them, palladium and platinum are extremely expensive. Using these two metals as internal electrodes will lead to a substantial increase in the cost of the varistor, which is not suitable for industrial production. Pure silver Low sintering temperature (below 950°C) is not conducive to the sintering of zinc oxide ceramics. Therefore, silver-palladium alloys are used as internal electrodes in the current chip varistor industry, and the sintering of zinc oxide varistor ceramics is reduced by improving the formula and process of zinc oxide varistors. temperature, the sintering temperature of the existing zinc oxide varistor material can be reduced to 1020~1100°C, so that the chip varistor can use an alloy with a silver-palladium mass ratio of 6 / 4 or 7 / 3 as the internal electrode, but the cost still higher

Method used

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preparation example Construction

[0052] The present invention also provides a method for preparing the aforementioned zinc oxide varistor material, which, in one embodiment, includes the following steps:

[0053] 1) The additive is mixed in a solvent for ball milling according to the ratio, so that it is fully mixed. The solvent is propyl acetate and ethanol with a mass ratio of 7.5:2.5, and the mass ratio of zirconia balls, the additive and the solvent is 8: 1:3;

[0054] 2) Sand mill the solution from which the zirconia balls are filtered out, so that the particle size of the additive is ground to D50=0.35-0.45μm to form a slurry with uniform particle size dispersion;

[0055] 3) Add the solvent, dispersant and main material zinc oxide described in step 1) to the slurry obtained in step 2). The particle size of the powder is uniformly ground, so that the particle size is D50=0.20-0.30 μm, and the zinc oxide varistor material is prepared.

[0056] The present invention also provides a chip zinc oxide varis...

Embodiment 1

[0059] The zinc oxide varistor material includes a host material and an additive with the following molar percentages: host material ZnO 95.17%, additive: Bi 2 O 3 0.5%, Cr 2 O 3 0.5%, TiO 2 0.5%, MnCO 3 1%, BaCO 3 0.2%, Co 3 O 4 0.8%, Ni 2 O 3 0.3%, SnO 2 0.5%, SrCO 3 0.2%, V 2 O 5 0.6%, H 3 BO 3 0.2%, Al 2 (NO 3 ) 3 ?9H 2 O 0.03%. Its preparation method is as follows:

[0060] Weigh all kinds of powders according to the above molar ratio. First, the additives are mixed with solvents, and zirconia balls, additives and solvents are added to the ball mill tank respectively (the mass ratio of propyl acetate / ethanol = 7.5 / 2.5). The zirconia balls: The mass ratio of additive and solvent is 8:1:3, and the ball is milled on a planetary ball mill for 1-2h, and the rotation speed is 200-400rmp, so that the additive is fully mixed and uniform;

[0061] After the above additive premixed ball milling is completed, pour the solution filtered out of th...

Embodiment 2

[0067] The zinc oxide varistor material includes a host material and an additive with the following mole percentages: host material ZnO 95.39%, additive: Bi 2 O 3 0.8%, Cr 2 O 3 0.2%, TiO 2 0.8%, MnCO 3 0.6%, BaCO 3 0.2%, Co 3 O 4 0.5%, Ni 2 O 3 0.3%, SnO 2 0.3%, SrCO 3 0.2%, V 2 O 5 0.6%, H 3 BO 3 0.1%, Al 2 (NO 3 ) 3 ?9H 2 O 0.01%.

[0068] The zinc oxide varistor material and the chip zinc oxide varistor are made according to the ratio of this embodiment. The preparation process is the same as that of the first embodiment. mm, the average nonlinear coefficient is 23.4, the leakage current (under 0.75V1mA) is 2.8μA, and the 8 / 20μs impulse current density is: 12.2A / mm 2 , other mechanical properties and excellent performance in reliability.

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Abstract

The invention discloses a zinc oxide piezoresistor material which comprises a main material and an additive, wherein the main material comprises 92-97mol% of ZnO; and the additive comprises 0.5-1.5mol% of Bi2O3, 0.1-1.2mol% of Cr2O3, 0.1-1.5mol% of MnCO3, 0.1-1.0mol% of BaCO3, 0.1-1.5mol% of Co3O4, 0.1-1.2mol% of SnO2, 0.1-1.0mol% of SrCO3, 0.1-1.0mol% of V2O5, 0.1-1mol% of H3BO3, and 0.005-0.1mol% of Al2(NO3)3.9H2O. When the zinc oxide piezoresistor material is adopted for preparing a finished product, the sintering temperature can be reduced to 900-940 DEG C while various excellent properties are ensured; when the zinc oxide piezoresistor material is adopted for preparing a sheet zinc oxide piezoresistor, a silver palladium alloy with a silver mass fraction greater than or equal to 85% can be matched as an inner electrode or pure silver can serve as the inner electrode; and the cost is lowered greatly.

Description

technical field [0001] The invention relates to the field of varistor material manufacturing, in particular to a zinc oxide varistor material and a preparation method. Background technique [0002] ZnO varistor is based on ZnO powder, adding various traces of other metal compound additives (such as Bi 2 o 3 , Sb 2 o 3 , MnCO 3 、Co 2 o 3 、Cr 2 o 3 etc.), a polycrystalline multi-phase semiconductor ceramic component formed by mixing, molding and sintering at high temperature. Since its invention, ZnO varistors have been widely used in power systems and electronics industries due to their low cost, convenient manufacture, large nonlinear coefficient, fast response time, and large flow capacity. [0003] The general sintering temperature of zinc oxide varistor ceramics is 1100-1500°C, while chip varistors are limited in their sintering temperature due to the addition of internal electrodes inside the ceramic body. The internal electrode metals generally used are platin...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01C7/112C04B35/453C04B35/622
Inventor 冯志刚毛海波贾广平杜士雄
Owner SHENZHEN SUNLORD ELECTRONICS
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