High-voltage high-power insulated gate bipolar translator (IGBT) driver based on digital control

A digital control and drive technology, applied in the direction of output power conversion devices, electrical components, etc., can solve the problem of not being able to intelligently control on or off, and achieve the effects of simple control, wide voltage range, and low requirements

Active Publication Date: 2013-04-10
GLOBAL ENERGY INTERCONNECTION RES INST CO LTD +2
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Problems solved by technology

Existing IGBT drivers are basically composed of simple analog circuits, which can only perform overall simple control on the turn-on and turn-off process of the IGBT, and cannot intelligently control the specific process of turn-on or turn-off, such as dynamically changing the turn-on resistance the

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  • High-voltage high-power insulated gate bipolar translator (IGBT) driver based on digital control

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Embodiment Construction

[0026] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0027] The design of the IGBT driver of the present invention includes the design of the driving power supply, the interface circuit design of the external controller, the design of the main control chip and the peripheral circuit, and the design of the drive adapter board. The drive power supply has the characteristics of wide input voltage range and high isolation voltage, and the dual power supply for drive output is generated inside the main control chip of the drive, which saves the design of negative power supply and reduces the complexity of power supply design. The input of control pulse and the feedback output of normal signal or fault signal adopt optical fiber interface, which has strong anti-interference ability. The use of digital control chips enables the dynamic adjustment of the IGBT driving process, maki...

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Abstract

The invention relates to the field of insulated gate bipolar translator (IGBT) driver design, in particular to a high-voltage high-power IGBT driver based on digital control. The IGBT driver comprises a drive main control panel and a drive adaptive panel. The drive main control panel is connected with three output terminals of the drive adaptive panel through high-voltage insulation guide lines. The drive adaptive panel is fixedly connected with a collector, a grid and an emitter of an IGBT through screws, and the drive main control panel is connected with the collector of the drive adaptive panel mounted on the IGBT through a single high-voltage guide line. The drive main control panel is connected with the grid and the emitter of the drive adaptive panel mounted on the IGBT through double-twisted high-voltage guide lines. The drive main control panel has a function of changing single power input to driving double power output, and the drive adaptive panel has functions of grid protection and active clamp. The high-voltage high-power IGBT driver based on digital control has the advantages of being safe and reliable, and through the digitally controlled IGBT driver, is simple and intelligent in control, and capable of controlling the specific process of switch-on or switch-off of the IGBT, and has unique advantages.

Description

technical field [0001] The invention relates to the field of IGBT driver design, in particular to a high-voltage and high-power IGBT driver based on digital control. Background technique [0002] With the development of modular multi-level flexible DC transmission technology and the development of turn-off devices, the power and voltage levels of IGBT turn-off devices used in converter valve sub-modules are getting higher and higher, so the gate drive conditions It is also getting higher and higher, and the reliable turn-on and turn-off characteristics and short-circuit protection function put forward higher requirements for the design of high-power IGBT drivers. Existing IGBT drivers are basically composed of simple analog circuits, which can only perform overall simple control on the turn-on and turn-off process of the IGBT, and cannot intelligently control the specific process of turn-on or turn-off, such as dynamically changing the turn-on resistance the size of. There...

Claims

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Application Information

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IPC IPC(8): H02M1/08
Inventor 贺之渊邓卫华冯静波客金坤李强
Owner GLOBAL ENERGY INTERCONNECTION RES INST CO LTD
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