51results about How to "High isolation voltage" patented technology

The invention provides an FPGA (field programmable gate array) control-based all-solid-state high-voltage nanosecond pulse generator, and belongs to the field of bio-electromagnetic technology. The nanosecond pulse generator mainly comprises a power supply system, a pulse forming system, a pulse measurement system, an FPGA control system, a signal conversion system and a portable computer. In the generator, the output pulse amplitude is between 0 and 10kV, the pulse width is between 200 and 1000ns, the pulse frequency is between 1 and 1000Hz, the falling edge is between 30 and 40ns, the number of pulse is between 1 and 1000, and particular parameters are determined according the requirement of tumor treatment. The FPGA control-based all-solid-state high-voltage nanosecond pulse generator has the characteristics of intelligent regulation of pulse parameters (pulse amplitude, width, frequency and number), optical fiber transmission, high parameter accuracy, long service life, small size, low failure rate, good security and the like; and the generator outputs high pulse frequency, and is advantageous to quick searching of the optimal window parameters for inducing tumor cell apoptosis by virtue of intelligent regulation, so that the tumor treatment effect is improved. The FPGA control-based all-solid-state high-voltage nanosecond pulse generator can be widely applied to tumor treatment.

A method of fabricating an electronic device and the resulting electronic device. The method includes forming a gate oxide on an uppermost side of a silicon-on-insulator substrate; forming a first polysilicon layer over the gate oxide; and forming a first silicon dioxide layer over the first polysilicon layer. A first silicon nitride layer is then formed over the first silicon dioxide layer followed by a second silicon dioxide layer. Shallow trenches are etched through all preceding dielectric layers and into the SOI substrate. The etched trenches are filled with another dielectric layer (e.g., silicon dioxide) and planarized. Each of the preceding dielectric layers are removed, leaving an uppermost sidewall area of the dielectric layer exposed for contact with a later-applied polysilicon gate area. Formation of the sidewall area assures a full-field oxide thickness thereby producing a device with a reduced-electric field and a reduced capacitance between gate and drift regions.

A method of fabricating an electronic device and the resulting electronic device. The method includes forming a gate oxide on an uppermost side of a silicon-on-insulator substrate; forming a first polysilicon layer over the gate oxide; and forming a first silicon dioxide layer over the first polysilicon layer. A first silicon nitride layer is then formed over the first silicon dioxide layer followed by a second silicon dioxide layer. Shallow trenches are etched through all preceding dielectric layers and into the SOI substrate. The etched trenches are filled with another dielectric layer (e.g., silicon dioxide) and planarized. Each of the preceding dielectric layers are removed, leaving an uppermost sidewall area of the dielectric layer exposed for contact with a later-applied polysilicon gate area. Formation of the sidewall area assures a full-field oxide thickness thereby producing a device with a reduced-electric field and a reduced capacitance between gate and drift regions.

The invention relates to the design field of a switch power supply, in particular to a high position energy-taking power supply device of a submodule of an MMC valve and a realizing method thereof. The high position energy-taking power supply device supplies power to a controller, a driver and a protective device of the submodule of the MMC valve. The device is characterized in that the device comprises a main circuit, electromagnetic interference circuits respectively arranged at input and output ends of the main circuit, and a fault output circuit arranged at the output end of the main circuit. The fault output end of the fault output circuit is connected with the controller of the submodule through optical fiber. The device provided by the invention has the characteristics of wide input voltage range, high isolation voltage and high reliability. Through serial input of a multi-flyback circuit, the input voltage stress is reduced, the reliability of the circuit is improved, and the electromagnetic compatibility (EMC) characteristic of the power supply is improved. Two-level isolation makes circuit outputs separated from each other, and the output short-circuit does not affect input.

The invention discloses a broadband high-voltage intelligent resistance voltage-division voltage sensor, which consists of the following components: a resistance type voltage divider (1) used to pick voltage signal from a measured voltage circuit, a high-voltage side signal processing device (2) used to convert the analog voltage signal output from the resistance type voltage divider (1) into digital signal and carry out operation processing, a set of communication optical fibers (5) connecting the high-voltage side signal processing device (2) and a low-voltage side digital display terminal (6), a high-voltage side electric source (3) providing working electric source for the high-voltage side signal processing device (2) and a high-voltage isolating transformer (4) connecting the high-voltage side electric source (3) and a low-voltage side power supply electric network. The broadband high-voltage intelligent resistance voltage-division voltage sensor has wide frequency response scope, AC / DC commonality, wide effective testing scope, no magnetic saturation problem, high measuring precision, high voltage resistance, high linearity, low temperature drift, easy calibration and strong anti-interference capability, and is suitable to be used in places such as an electric motor manufacturing enterprise and an electric motor research and detection center, etc.

A high-power silicon controlled rectifier cabinet continuity detection device comprises three parts, namely a signal acquisition part, a signal processing part and a transmitting and displaying part, wherein the signal acquisition part acquires the bridge arm current of a silicon controlled rectifier via a sensor and measures the tube voltage drop of the silicon controlled rectifier via a low time-lag transmitter. As the bridge arm current and the tube voltage drop of the silicon controlled rectifier are opposite in phase, when the silicon controlled rectifier is cut off, the tube voltage drop is the anode alternating current line voltage; when the silicon controlled rectifier is triggered to be on, the tube voltage drop is very low as 2V approximately; each round comprises a continuity period and a cutoff period; and according to the relationship, the signal processing part can preliminarily judge whether the silicon controlled rectifier is in a controllable state.

The invention relates to an isolation circuit. The isolation circuit comprises an isolation capacitor module, a first sampling resistor, a first amplifier and a latch; the first sampling resistor, thefirst amplifier and the latch are positioned on the second tube core; one end of the isolation capacitor module receives an input signal; the other end of the isolation capacitor module is connectedwith one end of a first sampling resistor and the input end of a first amplifier; the output end of the first amplifier is connected with the input end of the latch, the other end of the first sampling resistor is grounded, the isolation capacitor module comprises one or more isolation capacitors, the isolation capacitor module is located on the first tube core and / or the second tube core, and thegrounding end of the first tube core and the grounding end of the second tube core are not grounded in common. High isolation voltage can be achieved through the isolation circuit, and a CMOS technology is adopted in the whole technical scheme.

The invention relates to a wide voltage input and invariable voltage output power supply module, which comprises a protection circuit, a voltage conversion circuit and an invariable voltage output circuit, wherein the protection circuit is connected with the voltage conversion circuit through a filter circuit, the voltage conversion circuit is directly connected with the invariable voltage outputcircuit; the protection circuit consists of an overcurrent protection circuit and an EMC (Electro Magnetic Compatibility) protection circuit, the overcurrent protection circuit is connected with an input voltage, and is connected with the filter circuit through the EMC protection circuit. The wide voltage input and invariable voltage output power supply module has the advantages of reasonable structure, high reliability, strong practicability, wide voltage input, invariable voltage high-precision output, strong antijamming capability, high isolation voltage and high conversion efficiency, andcan be used under any worse electric environment. The overcurrent protection circuit can protect devices in circuits from being damaged when the input voltage generates overcurrent or short-circuit; by the protection of the EMC circuit, the noise and ripple waves in the input voltage can be reduced, and the antijamming capability is strong.

The invention provides an isolating circuit. The isolating circuit comprises a primary isolating capacitor, a second capacitor, a secondary isolating capacitor, a fourth capacitor, and an amplifier, wherein the second end of the primary isolating capacitor is connected to the first end of the second capacitor and the input end of the amplifier; the second end of the secondary isolating capacitor is connected to the first end of the fourth capacitor and the input end of the amplifier; the second end of the second capacitor and the second end of the fourth capacitor are commonly connected to a grounding end; the inputs of the first end of the primary isolating capacitor and the first end of the secondary isolating capacitor are in phase reversal; and the second capacitor, the fourth capacitor and the amplifier are in a second tube core. Through one or more implementation ways of the invention, relatively high isolating voltage can be realized, and the problems that the opto-coupler is aged, the performance is changed along the temperature, and the electric performance is bad are avoided since the circuit and the isolating capacitor are made from the CMOS process; therefore, the isolating circuit disclosed by the invention is stable in quality, long in life and low in cost.

The invention provides a pulsed magnet field generator based on coil spherical focusing and IGBT single transistor parallel connection. The pulsed magnet field generator comprises a power supply system, a pulse current forming system, five coil spherical optimization focusing devices, a signal transformation system and a synchronized trigger module, and the switching power supply of the power supply system carry out voltage reduction on an alternating current power supply to form direct currents, is connected with the pulse current forming system, the signal transformation system and the synchronized trigger module and supplies power. The output ends of pulse generating modules M1-M5are connected with current carrying coils C1-C5 in the five coil spherical optimization focusing devices respectively. The electrical-optical converter J2 of the signal transformation system is respectively connected with the control ends of the pulse generating modules M1-M5. The output end of the synchronized trigger module is respectively connected with the electrical-optical converter J1 and the electrical-optical converter J2 of the signal transformation system. The pulsed magnet field generator is high in integration level, longer in service life and higher in work efficiency, the circuit size is greatly reduced, and the loss of the whole circuit is lowered.

A high-isolation voltage electric-light-electric isolation structure comprises a light source chip and a light detection chip which are arranged by being opposite in position; the space between the light source chip and the light detection chip and the space around the light source chip and the light detection chip are filled by insulation light guide glue; the innovative points are that a light guide tube is arranged between the light source chip and the light detection chip; an inner hole of the light guide tube, the light source chip and the light detection chip are arranged by being aligned; insulation light guide glue is injected in the light guide tube of which the dielectric strength is greater than that of the insulation light guide glue. The high-isolation voltage electric-light-electric isolation structure has the beneficial effects that the problem that the light quantity reaching the light detection chip is reduced because of the rising of an isolation voltage is solved, and the electric-light-electric isolation structure can obtain the larger isolation voltage.

The invention discloses an integrated chip type current sensor and a manufacturing method thereof, and relates to the technical field of current sensors. The integrated chip type current sensor comprises a metal plate lead frame conductor device and an iron core; the metal plate lead frame conductor device is bonded with a magnetic induction probe and is provided with a plastic package body wrapping the magnetic induction probe; the iron core is U-shaped and is provided with a U-shaped groove, and the plastic package body is inserted into the U-shaped groove of the iron core; and the outer side of the plastic package body is provided with a shell wrapping the iron core. The Hall ASIC chip, the iron core and the busbar are subjected to integrated injection molding, so that the weight size of the sensor is greatly reduced, and the vibration resistance and the thermal shock resistance are effectively improved; and meanwhile, the lead frame for assembling the Hall ASIC chip and the busbarare integrally arranged, the distance is accurate, the purpose of improving the isolation voltage of the primary side and the secondary side is achieved, and the effects of simplifying the design difficulty, being easy to machine, being suitable for automatic production and improving the batch manufacturing process level are achieved.

The invention provides an IGBT series connection based high-voltage pulse superposition direct-current electric field generator. The generator generates bipolar high-voltage pulse through an IGBT single-tube series circuit, and superposes high-voltage direct current on the basis of the bipolar high-voltage pulse generated by the IGBT single-tube series circuit; and compound voltage generated by the IGBT series connection based high-voltage pulse superposition direct-current electric field generator acts on an oil purifying device provided with a positive plate and a negative plate, and then, a direct-current steep pulse compound electric field is generated between the positive plate and the negative plate. Abundant frequency components of the bipolar steep pulse electric field can act on various colloid impurity particles, so that the particles perform reciprocating movement to be separated from oil molecules, then, the particles perform directional movement under the action of the high-voltage direct-current electric field and are absorbed on the polar plates, and accordingly, degraded transformer oil is purified.

The invention provides a high-voltage and high-frequency transformer. The high-voltage and high-frequency transformer comprises a framework, and a first inner insulating layer, a magnetic shielding layer, a second inner insulating layer, a first primary side layer, a first primary side and secondary side interlayer insulating layer, a secondary side layer, a second primary side and secondary side interlayer insulating layer, a second primary side layer and an outer insulating layer which are wound on the framework in a direction perpendicular to the axis of the framework in sequence. Correspondingly, the invention also provides a winding method for the high-voltage and high-frequency transformer. The high-voltage and high-frequency transformer disclosed by the invention also has high-isolation-voltage and high-frequency performance.

The invention relates to the field of intelligent super-junction MOS devices, and discloses an intelligent super-junction MOS device and a manufacturing method thereof. According to the invention, the intelligent super-junction MOS device comprises a main MOS and a plurality of functional MOS which are integrally connected on a chip, and the intelligent super-junction MOS device is characterized in that the functional MOS is arranged in the range of the main MOS, the distribution of the functional MOS on the chip comprises a functional MOS isolation region and a functional MOS active region, and the functional MOS active region comprises a plurality of groups of P-type doped region columns and N-type doped region columns which are parallel to each other and are arranged at intervals. The functional MOS isolation region comprises N-type doped region columns and P-type doped region columns, the N-type doped region columns surround the periphery of the functional active region in a square shape, and the P-type doped region columns are evenly distributed in the N-type doped region columns in a lattice shape. According to the intelligent super-junction MOS device disclosed by the invention, the independence of a functional MOS active region can still be ensured after process high-temperature annealing, and ultrahigh isolation voltage can be ensured.

The invention discloses a micropower power supply converting circuit, which comprises a first resistive circuit, a first switching triode, a second switching triode, a transformer, a first diode, a second diode and a third capacitive circuit, wherein one end of a first resistor is connected with an input voltage end, while the other end is a first connecting wire; a variant-name end of a third winding is connected with the base of the second switching triode; and the other components are connected according to a common DC-DC conversion circuit. The micropower power supply converting circuit further comprises a second capacitive circuit and a fourth winding of the transformer, wherein one end of the second capacitive circuit is connected with the first connecting wire, while the other end is grounded; a variant-name end of the fourth winding is connected with a same-name end of the third winding to form a second tap of the transformer; and a same-name end of the fourth winding is connected with the base of the first switching triode and the second tap is connected with the first connecting wire. The micropower power supply converting circuit realizes DC-DC conversion with high isolation of input and an outputs and short circuit protection function on the application occasions of less than or equal to output power of 5W.

The invention relates to a wide voltage input and invariable voltage output power supply module, which comprises a protection circuit, a voltage conversion circuit and an invariable voltage output circuit, wherein the protection circuit is connected with the voltage conversion circuit through a filter circuit, the voltage conversion circuit is directly connected with the invariable voltage output circuit; the protection circuit consists of an overcurrent protection circuit and an EMC (Electro Magnetic Compatibility) protection circuit, the overcurrent protection circuit is connected with an input voltage, and is connected with the filter circuit through the EMC protection circuit. The wide voltage input and invariable voltage output power supply module has the advantages of reasonable structure, high reliability, strong practicability, wide voltage input, invariable voltage high-precision output, strong antijamming capability, high isolation voltage and high conversion efficiency, and can be used under any worse electric environment. The overcurrent protection circuit can protect devices in circuits from being damaged when the input voltage generates overcurrent or short-circuit; by the protection of the EMC circuit, the noise and ripple waves in the input voltage can be reduced, and the antijamming capability is strong.

The invention provides a novel engine test bed electronic throttle signal simulator and relates to the technical field of automobile engine detection experiments. The novel engine test bed electronic throttle signal simulator aims at solving the problem that an existing old engine test bed is not provided with an electronic throttle signal interface, the function of the electronic throttle signal interface can be achieved by contacting with a test bed supplier to update a whole system and consuming high cost and accordingly lots of old test beds on service cannot meet the requirement for engine tests controlled by electronic throttles. The signal output end of an engine test bed mechanical throttle control system is connected with the signal input end of a switching amplifier with high common mode rejection ratio of the mechanical throttle control system, the signal output end of the switching amplifier with the high common mode rejection ratio outputs a signal to an engine ECU through a voltage operation adjusting circuit, a voltage isolation module circuit and a second group of driving voltage generating circuits. The novel engine test bed electronic throttle signal simulator is applicable to modification of the old engine test beds, achieves an electronic throttle signal output function and has high common mode rejection ratio and fault-tolerant capability and very low non-linear voltage.

The invention relates to a mobile compact on-site high-voltage test device. The device is used for carrying out on-site tests on a split ultrahigh-voltage transformer and an extra-high-voltage transformer. The device comprises a variable-frequency power supply and a reactive power compensation module, the reactive compensation module comprises a low-voltage dynamic switching capacitor bank, a boosting transformer and a fixed capacitor bank; the output end of the variable-frequency power supply is connected to the low-voltage end of the reactive power compensation module, the low-voltage end ofthe reactive power compensation module is connected with the low-voltage dynamic switching capacitor bank in parallel, the boosting transformer is arranged between the low-voltage end and the high-voltage end of the reactive power compensation module, and the high-voltage end of the reactive power compensation module is connected with the fixed capacitor bank in parallel. According to the invention, reactive compensation dynamic fine compensation and power supply output single-phase and three-phase switching can be realized, and the device is suitable for tests of the split ultrahigh-voltagetransformer and the extra-high-voltage transformer.

The invention relates to a trench type high-voltage isolation capacitor device based on a Trench process and a preparation method, at least four grooves are formed in a silicon substrate, high-temperature oxidation is performed on the silicon substrate on the side surfaces and the bottom surfaces of the grooves and the upper surface of the silicon substrate to form a silicon dioxide dielectric layer, polycrystalline silicon is filled in the grooves, grounding polycrystalline silicon is formed in the leftmost groove and the rightmost groove, high-voltage isolation capacitor polycrystalline silicon is formed in the middle groove, an insulation covering silicon dioxide layer and an insulation covering silicon nitride layer are arranged on the upper surface of the polycrystalline silicon, a contact hole is formed in the insulation covering layer, and a grounding polycrystalline silicon extraction electrode and a high-voltage isolation capacitor polycrystalline silicon extraction electrode are arranged in the contact hole. The capacitor device is high in voltage resistance and simple in structure, the preparation method solves the problem that the thickness of the silicon dioxide dielectric layer of the capacitor device is difficult to grow, and high isolation voltage of the capacitor device is achieved.

The invention provides an isolation circuit which comprises a main isolation capacitor, a second capacitor and a first amplifier, wherein the main isolation capacitor has one end and another end, the other end of the main isolation capacitor is connected to one end of the second capacitor and the input end of the first amplifier, the other end of the second capacitor is connected to a second ground terminal, and the second capacitor and the first amplifier are in a second tube core. Through one or more embodiments of the present invention, high isolation voltage can be achieved, since the circuit and the isolation capacitor are made by CMOS process, the problems of the aging of an optocoupler, the change of performance with temperature and poor electric performance do not exist, so the quality is stable, the service life is long, and the cost is low.

The invention provides an FPGA (field programmable gate array) control-based all-solid-state high-voltage nanosecond pulse generator, and belongs to the field of bio-electromagnetic technology. The nanosecond pulse generator mainly comprises a power supply system, a pulse forming system, a pulse measurement system, an FPGA control system, a signal conversion system and a portable computer. In the generator, the output pulse amplitude is between 0 and 10kV, the pulse width is between 200 and 1000ns, the pulse frequency is between 1 and 1000Hz, the falling edge is between 30 and 40ns, the number of pulse is between 1 and 1000, and particular parameters are determined according the requirement of tumor treatment. The FPGA control-based all-solid-state high-voltage nanosecond pulse generator has the characteristics of intelligent regulation of pulse parameters (pulse amplitude, width, frequency and number), optical fiber transmission, high parameter accuracy, long service life, small size, low failure rate, good security and the like; and the generator outputs high pulse frequency, and is advantageous to quick searching of the optimal window parameters for inducing tumor cell apoptosis by virtue of intelligent regulation, so that the tumor treatment effect is improved. The FPGA control-based all-solid-state high-voltage nanosecond pulse generator can be widely applied to tumor treatment.

The invention discloses an isolated upper bridge bootstrap charge pump circuit for a bridge driver and a control method. The isolated upper bridge bootstrap charge pump circuit for a bridge driver hasthe advantages of simple circuit structure, convenience in assembly and strong expandability. The circuit comprises a square wave generator, two groups of pulse conversion circuits, a switching circuit and a transformer output circuit, and the square wave generator, two groups of pulse conversion circuits, the switching circuit and the transformer output circuit are connected step by step; the square wave generator is used for generating square waves with the high level of VH and the low level of 0; the two groups of pulse conversion circuits are connected in parallel between the square wavegenerator and the switching circuit and are used for converting the square wave into positive and negative alternating pulse voltage signals and inputting the positive and negative alternating pulse voltage signals into the switching circuit; the transformer output circuit comprises a primary winding T1, a primary winding T2 and a secondary winding T3; the primary winding T1 and the primary winding T2 are connected end to end in a duplex winding mode to serve as input ends to be connected with the switching circuit, and a common end is connected with the input port 001 of the voltage source; and the secondary winding T3 adopts a single winding mode to serve as an output end, and two ends of the secondary winding T3 are respectively a voltage output positive port 002 and a voltage output negative port 003.

An interface circuit of a high-speed serial transceiver comprises an FPGA chip with serial communication drive, the FPGA chip is connected with an interface, and the interface circuit is characterizedin that an output port and an input port of the FPGA chip are connected with a first isolation circuit and a second isolation circuit respectively. By the adoption of the isolation circuits and namely a mutual inductor isolation mode, isolation voltage can be greatly increased; meanwhile, anti-interference capacity is promoted, the interface circuit is prone to being interfered by an external electric field in an original capacitor isolation mode, after the original capacitor isolation mode is changed into the mutual inductor isolation mode, original coaxial cable transmission media are changed into twisted-pair media, and transmission distance is greatly increased.

The invention discloses a design method of an output driving power supply of multiple isolation circuits, and relates to the technical field of power supply design. Specific to multiple isolation circuits, a unified output driving power supply is provided, wherein the output driving power supply comprises an oscillating circuit and a flyback type power supply primary side power circuit; the flyback type power supply primary side power circuit comprises an MOS transistor and a transformer; the oscillating circuit is connected with the primary side of the transformer through the MOS transistor,while the secondary side of the transformer and the multiple isolation circuits form multiple secondary side rectifying circuits and multiple secondary side filtering circuits; and multiple-path isolation output of the isolation circuits can be realized, the PCB occupied space is relatively small, the isolation voltage is high, circuit design on the PCB is optimized, and the cost is lowered.

The invention belongs to the field of wireless power transmission and provides a half-bridge module inductive gate drive power supply based on a four-layer PCB. The drive power supply has a four-layerPCB structure and comprises a transmitter and two receivers, wherein the transmitter is composed of a transmitting circuit and a transmitting coil; the receiver is composed of a receiving circuit anda receiving coil; the two receivers provide two ways of isolated power supply voltage for providing power for drive circuits of upper and lower bridge arm switches on an IGBT half-bridge module; thetransmitting circuit and the receiving circuit are placed in the top PCB layer; and the receiving coil, the transmitting coil and the second receiving coil are sequentially located in the first middlePCB layer, the second middle PCB layer and the bottom PCB layer. An inductive non-contact power transmission technology is adopted, completely no electrical contact exists between the transmitting coil and the receiving coil, and depending on the PCB insulation layer for isolation is realized; and each composition is highly integrated on the four-layer PCB, and miniaturization and light weight are realized easily.

The invention discloses a micropower power supply converting circuit, which comprises a first resistive circuit, a first switching triode, a second switching triode, a transformer, a first diode, a second diode and a third capacitive circuit, wherein one end of a first resistor is connected with an input voltage end, while the other end is a first connecting wire; a variant-name end of a third winding is connected with the base of the second switching triode; and the other components are connected according to a common DC-DC conversion circuit. The micropower power supply converting circuit further comprises a second capacitive circuit and a fourth winding of the transformer, wherein one end of the second capacitive circuit is connected with the first connecting wire, while the other end is grounded; a variant-name end of the fourth winding is connected with a same-name end of the third winding to form a second tap of the transformer; and a same-name end of the fourth winding is connected with the base of the first switching triode and the second tap is connected with the first connecting wire. The micropower power supply converting circuit realizes DC-DC conversion with high isolation of input and an outputs and short circuit protection function on the application occasions of less than or equal to output power of 5W.

The invention discloses a power transfer power supply circuit, which includes a voltage control circuit, an oscillation circuit, a transformer, a power output circuit and a power transfer state monitoring circuit. The input DC voltage signal is converted into an AC oscillating signal of a specific frequency. The transformer is used to isolate the front and rear stages and transmit the signals separately. After filtering and rectification, it is converted into a DC driving voltage to control the conduction of the power supply battery output circuit and the power transfer status monitoring circuit. It also discloses the operation method of the circuit, realizes the switching control of the ground power supply and the battery power supply of the system, and has functions such as combined output of two power supply lines and power transfer status monitoring. , has a high isolation voltage, and adopts redundant and current sharing design. The circuit has strong scalability, which can not only expand the current capacity, reduce power consumption, but also meet the redundant design of the circuit.