51results about How to "High isolation voltage" patented technology

A method of fabricating an electronic device and the resulting electronic device. The method includes forming a gate oxide on an uppermost side of a silicon-on-insulator substrate; forming a first polysilicon layer over the gate oxide; and forming a first silicon dioxide layer over the first polysilicon layer. A first silicon nitride layer is then formed over the first silicon dioxide layer followed by a second silicon dioxide layer. Shallow trenches are etched through all preceding dielectric layers and into the SOI substrate. The etched trenches are filled with another dielectric layer (e.g., silicon dioxide) and planarized. Each of the preceding dielectric layers are removed, leaving an uppermost sidewall area of the dielectric layer exposed for contact with a later-applied polysilicon gate area. Formation of the sidewall area assures a full-field oxide thickness thereby producing a device with a reduced-electric field and a reduced capacitance between gate and drift regions.

A method of fabricating an electronic device and the resulting electronic device. The method includes forming a gate oxide on an uppermost side of a silicon-on-insulator substrate; forming a first polysilicon layer over the gate oxide; and forming a first silicon dioxide layer over the first polysilicon layer. A first silicon nitride layer is then formed over the first silicon dioxide layer followed by a second silicon dioxide layer. Shallow trenches are etched through all preceding dielectric layers and into the SOI substrate. The etched trenches are filled with another dielectric layer (e.g., silicon dioxide) and planarized. Each of the preceding dielectric layers are removed, leaving an uppermost sidewall area of the dielectric layer exposed for contact with a later-applied polysilicon gate area. Formation of the sidewall area assures a full-field oxide thickness thereby producing a device with a reduced-electric field and a reduced capacitance between gate and drift regions.

The invention relates to the design field of a switch power supply, in particular to a high position energy-taking power supply device of a submodule of an MMC valve and a realizing method thereof. The high position energy-taking power supply device supplies power to a controller, a driver and a protective device of the submodule of the MMC valve. The device is characterized in that the device comprises a main circuit, electromagnetic interference circuits respectively arranged at input and output ends of the main circuit, and a fault output circuit arranged at the output end of the main circuit. The fault output end of the fault output circuit is connected with the controller of the submodule through optical fiber. The device provided by the invention has the characteristics of wide input voltage range, high isolation voltage and high reliability. Through serial input of a multi-flyback circuit, the input voltage stress is reduced, the reliability of the circuit is improved, and the electromagnetic compatibility (EMC) characteristic of the power supply is improved. Two-level isolation makes circuit outputs separated from each other, and the output short-circuit does not affect input.

The invention relates to a wide voltage input and invariable voltage output power supply module, which comprises a protection circuit, a voltage conversion circuit and an invariable voltage output circuit, wherein the protection circuit is connected with the voltage conversion circuit through a filter circuit, the voltage conversion circuit is directly connected with the invariable voltage output circuit; the protection circuit consists of an overcurrent protection circuit and an EMC (Electro Magnetic Compatibility) protection circuit, the overcurrent protection circuit is connected with an input voltage, and is connected with the filter circuit through the EMC protection circuit. The wide voltage input and invariable voltage output power supply module has the advantages of reasonable structure, high reliability, strong practicability, wide voltage input, invariable voltage high-precision output, strong antijamming capability, high isolation voltage and high conversion efficiency, and can be used under any worse electric environment. The overcurrent protection circuit can protect devices in circuits from being damaged when the input voltage generates overcurrent or short-circuit; by the protection of the EMC circuit, the noise and ripple waves in the input voltage can be reduced, and the antijamming capability is strong.

The invention provides an FPGA (field programmable gate array) control-based all-solid-state high-voltage nanosecond pulse generator, and belongs to the field of bio-electromagnetic technology. The nanosecond pulse generator mainly comprises a power supply system, a pulse forming system, a pulse measurement system, an FPGA control system, a signal conversion system and a portable computer. In the generator, the output pulse amplitude is between 0 and 10kV, the pulse width is between 200 and 1000ns, the pulse frequency is between 1 and 1000Hz, the falling edge is between 30 and 40ns, the number of pulse is between 1 and 1000, and particular parameters are determined according the requirement of tumor treatment. The FPGA control-based all-solid-state high-voltage nanosecond pulse generator has the characteristics of intelligent regulation of pulse parameters (pulse amplitude, width, frequency and number), optical fiber transmission, high parameter accuracy, long service life, small size, low failure rate, good security and the like; and the generator outputs high pulse frequency, and is advantageous to quick searching of the optimal window parameters for inducing tumor cell apoptosis by virtue of intelligent regulation, so that the tumor treatment effect is improved. The FPGA control-based all-solid-state high-voltage nanosecond pulse generator can be widely applied to tumor treatment.

An interface circuit of a high-speed serial transceiver comprises an FPGA chip with serial communication drive, the FPGA chip is connected with an interface, and the interface circuit is characterizedin that an output port and an input port of the FPGA chip are connected with a first isolation circuit and a second isolation circuit respectively. By the adoption of the isolation circuits and namely a mutual inductor isolation mode, isolation voltage can be greatly increased; meanwhile, anti-interference capacity is promoted, the interface circuit is prone to being interfered by an external electric field in an original capacitor isolation mode, after the original capacitor isolation mode is changed into the mutual inductor isolation mode, original coaxial cable transmission media are changed into twisted-pair media, and transmission distance is greatly increased.

The invention belongs to the field of wireless power transmission and provides a half-bridge module inductive gate drive power supply based on a four-layer PCB. The drive power supply has a four-layerPCB structure and comprises a transmitter and two receivers, wherein the transmitter is composed of a transmitting circuit and a transmitting coil; the receiver is composed of a receiving circuit anda receiving coil; the two receivers provide two ways of isolated power supply voltage for providing power for drive circuits of upper and lower bridge arm switches on an IGBT half-bridge module; thetransmitting circuit and the receiving circuit are placed in the top PCB layer; and the receiving coil, the transmitting coil and the second receiving coil are sequentially located in the first middlePCB layer, the second middle PCB layer and the bottom PCB layer. An inductive non-contact power transmission technology is adopted, completely no electrical contact exists between the transmitting coil and the receiving coil, and depending on the PCB insulation layer for isolation is realized; and each composition is highly integrated on the four-layer PCB, and miniaturization and light weight are realized easily.

The invention discloses a micropower power supply converting circuit, which comprises a first resistive circuit, a first switching triode, a second switching triode, a transformer, a first diode, a second diode and a third capacitive circuit, wherein one end of a first resistor is connected with an input voltage end, while the other end is a first connecting wire; a variant-name end of a third winding is connected with the base of the second switching triode; and the other components are connected according to a common DC-DC conversion circuit. The micropower power supply converting circuit further comprises a second capacitive circuit and a fourth winding of the transformer, wherein one end of the second capacitive circuit is connected with the first connecting wire, while the other end is grounded; a variant-name end of the fourth winding is connected with a same-name end of the third winding to form a second tap of the transformer; and a same-name end of the fourth winding is connected with the base of the first switching triode and the second tap is connected with the first connecting wire. The micropower power supply converting circuit realizes DC-DC conversion with high isolation of input and an outputs and short circuit protection function on the application occasions of less than or equal to output power of 5W.

The invention discloses a power transfer power supply circuit, which includes a voltage control circuit, an oscillation circuit, a transformer, a power output circuit and a power transfer state monitoring circuit. The input DC voltage signal is converted into an AC oscillating signal of a specific frequency. The transformer is used to isolate the front and rear stages and transmit the signals separately. After filtering and rectification, it is converted into a DC driving voltage to control the conduction of the power supply battery output circuit and the power transfer status monitoring circuit. It also discloses the operation method of the circuit, realizes the switching control of the ground power supply and the battery power supply of the system, and has functions such as combined output of two power supply lines and power transfer status monitoring. , has a high isolation voltage, and adopts redundant and current sharing design. The circuit has strong scalability, which can not only expand the current capacity, reduce power consumption, but also meet the redundant design of the circuit.