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Method for growing silicon base ordered quantum dots by taking polystyrene nanoball as template

A polystyrene nano, quantum dot technology, applied in sustainable manufacturing/processing, electrical components, climate sustainability, etc., to achieve the effect of reducing requirements and simplifying procedures

Inactive Publication Date: 2013-04-17
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Although the uniformity of quantum dots can be controlled more accurately through the etching process, the patterned substrate prepared by the etching process puts forward higher requirements for the etching equipment and process, and the quantum dots obtained by the etching method It is also challenging to be smaller than 50nm in size

Method used

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  • Method for growing silicon base ordered quantum dots by taking polystyrene nanoball as template
  • Method for growing silicon base ordered quantum dots by taking polystyrene nanoball as template

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Embodiment 1

[0036] Hereinafter, the present invention will be described in detail by taking the growth of silicon-based germanium quantum dots as an example, but the present invention is not limited thereto.

[0037] A method utilizing polystyrene nanospheres as a template to grow silicon-based germanium quantum dots, comprising the steps of:

[0038] (1) Two-inch P-type (111) silicon wafers are cleaned by RCA to obtain a flat and clean surface, and there is a layer of chemically oxidized dense SiO on the surface 2 The passivation layer protects the silicon wafer from further oxidation in the air environment.

[0039] The RCA cleaning steps are as follows: ultrasonically clean with acetone solution for 10 minutes, and then rinse repeatedly with deionized water; Rinse repeatedly with water; soak the silicon chip in 4% HF solution by mass percentage for 1 minute, then rinse repeatedly with deionized water; boil the silicon chip in a mixed solution of hydrochloric acid hydrogen peroxide and...

Embodiment 2

[0045] The present invention will be described in detail below by taking the growth of silicon-based zinc oxide quantum dots as an example, but the present invention is not limited thereto.

[0046] A method utilizing polystyrene nanospheres as a template to grow silicon-based zinc oxide quantum dots, comprising the steps of:

[0047] (1) Two-inch P-type (111) silicon wafers are cleaned by RCA to obtain a flat and clean surface, and there is a layer of chemically oxidized dense SiO on the surface 2 The passivation layer protects the silicon wafer from further oxidation in the air environment.

[0048] The RCA cleaning steps are as follows: ultrasonically clean with acetone solution for 15 minutes, and then rinse repeatedly with deionized water; Rinse repeatedly with water; soak the silicon chip in 4% HF solution by mass percentage for 1 minute, then rinse repeatedly with deionized water; boil the silicon chip in a mixed solution of hydrochloric acid hydrogen peroxide and wate...

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Abstract

The invention discloses a method for growing silicon base ordered quantum dots by taking polystyrene nanoballs as a template. The method comprises the following steps of on a silicon wafer covered by a compact passivated layer, preparing a single layer of sequentially and compactly arranged polystyrene nanoballs as the template; growing the quantum dots; and after annealing at high temperature, obtaining the quantum dots which are orderly distributed and are uniform in size while removing the polystyrene nanoball template. The polystyrene nanoballs serve as the template to grow the silicon base quantum dots, so that the silicon base quantum dots which are orderly distributed can be obtained without performing the etching process of patterning a lining, the requirement on etching equipment is greatly reduced, and the procedure of growing the silicon base quantum dots is simplified.

Description

technical field [0001] The invention relates to the field of silicon optoelectronics, in particular to a method for growing silicon-based ordered quantum dots using polystyrene spheres as templates. Background technique [0002] In the past half century, the development of silicon-based devices has achieved amazing results, and the microelectronics industry based on this has rapidly grown into one of the largest and most vital industries in the world, and has detonated the current information age. . [0003] The integration level of silicon-based microelectronic chips is getting higher and higher, and the functions are getting stronger and stronger, which is the concrete manifestation of the continuous breakthrough of silicon-based semiconductor technology. However, with the further improvement of chip integration, the size of each device unit has been reduced again and again, the limitations of traditional processes and the limitations of the basic physical problems of the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0352
CPCY02P70/50
Inventor 叶辉
Owner ZHEJIANG UNIV