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Chip of light-emitting diode and preparation method thereof

A technology for light-emitting diodes and chips, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of small total reflection angle, inability to effectively improve the light extraction efficiency of chips, and low refractive index of semiconductor light-emitting materials. rate, avoid total reflection, improve the effect of luminous rate

Active Publication Date: 2013-04-17
HC SEMITEK CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Due to the low refractive index of the semiconductor luminescent material, the critical total reflection angle is relatively small; so that most of the light reflected by the reflective layer to the top surface of the epitaxial wafer is reflected back to the inside of the chip, and is absorbed and converted into heat energy, which cannot effectively improve the chip performance. light extraction efficiency

Method used

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  • Chip of light-emitting diode and preparation method thereof
  • Chip of light-emitting diode and preparation method thereof
  • Chip of light-emitting diode and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] see figure 1 and figure 2, the embodiment of the present invention provides a LED chip, the chip includes: a substrate layer 1, an N-type layer 2 sequentially covered on the substrate layer 1, a light-emitting layer 3, a P-type layer 4 and a transparent conductive layer 5, and respectively The N electrode 6 and the P electrode 7 drawn out on the N type layer 2 and the P type layer 4 . Wherein, the chip further includes a transparent medium layer covering the bottom surface of the substrate layer 1 and / or the upper surface of the transparent conductive layer 5 . The refractive index of the transparent medium layer covering the bottom surface of the substrate layer 1 is higher than that of the substrate layer 1 ; the refractive index of the transparent medium layer covering the upper surface of the transparent conductive layer 5 is higher than that of the transparent conductive layer 5 .

[0051] Specifically, the substrate layer 1 includes a sapphire substrate, a sili...

Embodiment 2

[0063] The embodiment of the present invention provides a method for preparing an LED chip, and the method flow includes:

[0064] 201: Provide a substrate layer, and sequentially grow an N-type layer, a light-emitting layer, a P-type layer, and a transparent conductive layer on the substrate layer.

[0065] 202: Prepare a wafer.

[0066] Among them, the preparation of the wafer includes: setting the N electrode and the P electrode on the N type layer and the P type layer respectively, and depositing a passivation layer on the transparent conductive layer, forming a transparent layer with a higher refractive index than the substrate layer on the bottom surface of the substrate layer. Dielectric layer made of transparent dielectric to obtain wafer. Or, form a transparent medium layer made of a transparent medium with a higher refractive index than the transparent conductive layer on the upper surface of the transparent conductive layer, set the N electrode and the P electrode ...

Embodiment 3

[0071] The embodiment of the present invention provides a method for preparing an LED chip, and the method flow includes:

[0072] 301: Provide a substrate layer, and sequentially grow an N-type layer, a light-emitting layer, a P-type layer, and a transparent conductive layer on the substrate layer.

[0073] Specifically, an N-type layer 32, a light-emitting layer 33, a P-type layer 34, and a transparent conductive layer 35 can be grown on the substrate layer 31 by means of MOCVD (Metal-organic Chemical Vapor Deposition) (see Figure 4 ). This is a well-known technology in the art and will not be described in detail here.

[0074] Wherein, the substrate layer 31 may be a sapphire substrate, a silicon substrate, a silicon carbide substrate or a gallium nitride substrate.

[0075] In addition, the N-type layer 32, the light emitting layer 33, and the P-type layer 34 are all made of GaN.

[0076] 302: Arrange N electrodes and P electrodes on the N-type layer and P-type layer r...

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Abstract

The invention discloses a chip of a light-emitting diode and a preparation method of the chip, and the chip and the preparation method belong to the field of semi-conductors. The chip comprises a substrate layer, an N-type layer, a light-emitting layer, a P-type layer, a transparent conductive layer, an N electrode and a P electrode which are respectively led out from the N-type layer and the P-type layer, and transparent medium layers covering the bottom surface of the substrate layer and / or the upper surface of the transparent conductive layer; the index of refraction of the transparent medium layer covering the bottom surface of the substrate layer is higher than that of the substrate layer; the index of refraction of the transparent medium layer covering the upper surface of the transparent conductive layer is higher than that of the transparent conductive layer; the transparent medium layer covering the bottom surface of the substrate layer comprises a plurality of bulges which extend out from the bottom surface of the substrate layer; and the transparent medium layer covering the upper surface of the transparent conductive layer comprises a plurality of bulges which extend out from the upper surface of the transparent conductive layer. According to the chip of the light-emitting diode and the preparation method thereof, the light extraction efficiency of a light-emitting diode (LED) is improved.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a chip of a light emitting diode and a preparation method of the chip. Background technique [0002] LED (Lighting Emitting Diode, Light Emitting Diode) emits light through the chip. The LED chip is made of semiconductor light-emitting materials, including epitaxial wafers, electrodes and passivation layers etched on the epitaxial wafers. [0003] After the LED chip is packaged, the packaging material covers the outer surface of the chip. Since the refractive index of the semiconductor luminescent material is close to that of the encapsulation material (such as epoxy resin), only a small part of the emitted light is refracted, which affects the luminous effect of the LED chip. In view of this, the prior art provides a solution: a reflective layer is formed on the bottom surface of the epitaxial wafer, and the reflective layer reflects the outgoing light directed to the bottom surf...

Claims

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Application Information

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IPC IPC(8): H01L33/44H01L33/00
Inventor 张威徐瑾王江波
Owner HC SEMITEK CORP
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