Method for preparing direct band-gap germanium thin film

A thin-film, direct technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of high dislocation density and high cost of tensile strain Ge thin films, and achieve the effect of low cost and simple process

Active Publication Date: 2013-04-24
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
View PDF6 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the object of the present invention is to provide a method for preparing a direct ban

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing direct band-gap germanium thin film
  • Method for preparing direct band-gap germanium thin film
  • Method for preparing direct band-gap germanium thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0016] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0017] see Figure 1a to Figure 1e shown. It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be chan...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention relates to a method for preparing a direct band-gap germanium thin film. The method comprises a GeOI substrate. A top layer germanium nanometer thin film is carried out a graphical processing, and a plurality of corrosion windows communicated with a bottom buried oxide layer is open. The buried oxide layer is carried out a wet etching until the buried oxide layer is thoroughly corroded so that the graphical top layer germanium nanometer thin film and a silicon substrate are virtually contacted. A polydimethylsiloxane (PDMS) carrier is provided and the PDMS carrier is closely connected with the top layer germanium nanometer thin film, so that the top layer germanium nanometer thin film virtually connected with the silicon substrate is transferred to the PDMS. Both ends of the PDMS carrier is clamped and carried out a reverse mechanical stretching so that the top layer germanium nanometer thin film can carry out deformation with the stretching of the polydimethylsiloxane carrier and produce a tensile strain inside. The strain size of the direct band-gap germanium thin film prepared with this method is controllable and can be used for a photoelectric device. The direct band-gap germanium thin film has the advantages of being small in defects and low in dislocation density. The method and technology for the direct band-gap germanium thin film prepared by the mechanical stretching is simple, and the cost is low.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a method for preparing a direct bandgap Ge thin film. Background technique [0002] The rapid development of microelectronics technology makes Moore's law approaching its physical limit and is challenged. The rapid development of silicon-based optoelectronics in recent years is considered to be able to effectively extend the extension of Moore's law. At present, the main obstacle hindering the development of silicon-based optoelectronic integration technology is how to solve the problem of on-chip light source compatible with the existing silicon-based CMOS. Therefore, finding an effective active light-emitting material that is compatible with the silicon process is an important part of silicon-based optoelectronic integration. [0003] When the tensile strain in the Ge thin film is greater than 2.0%, the original indirect bandgap material can be transformed i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L21/02
Inventor 狄增峰郭庆磊张苗卞剑涛叶林陈达
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap