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Semiconductor/metal/semiconductor quantum well structure, preparation method and application thereof

A semiconductor and quantum well technology, applied in the field of semiconductor/metal/semiconductor quantum well structure, can solve the problems that cannot be realized and difficult to obtain high-quality semiconductor/metal/semiconductor epitaxial structure, and achieve the elimination of twins and high quality single crystal , the effect of reducing environmental noise

Pending Publication Date: 2022-01-25
NANJING UNIV +1
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Problems solved by technology

In addition, semiconductor / metal / semiconductor transistors have always been ideal devices expected in microwave circuit design, but cannot be realized because of the difficulty in obtaining high-quality semiconductor / metal / semiconductor epitaxial structures, especially high-quality semiconductor epitaxy on metal

Method used

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  • Semiconductor/metal/semiconductor quantum well structure, preparation method and application thereof
  • Semiconductor/metal/semiconductor quantum well structure, preparation method and application thereof
  • Semiconductor/metal/semiconductor quantum well structure, preparation method and application thereof

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Embodiment

[0054] First, deoxidize the (111) crystal plane Si substrate, treat it with 8% hydrofluoric acid for 1 minute, the surface is hydrogen passivated surface, and then put it into the group IV molecular beam epitaxy equipment, at 900-1000 ℃ Under the condition of dehydrogenation treatment, a clean Si surface is obtained. The Si buffer layer can be grown on the Si surface, and the Si buffer layer can improve the surface flatness to a certain extent, thereby improving the surface flatness of subsequent film growth.

[0055] Next, an Al seed layer is grown under the condition of -50°C-50°C. The low-temperature growth and high-temperature annealing of the seed layer can obtain high-quality Al single crystal, which can be used as a template for subsequent epitaxial growth to ensure the quality of subsequent epitaxy.

[0056] The Al seed layer is heated at 100° C.-200° C. and annealed for 10-30 minutes.

[0057] Next, a layer of Al film with a thickness of 0.1-100nm is grown at a grow...

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Abstract

The invention provides a semiconductor / metal / semiconductor quantum well structure, which is characterized in that the semiconductor / metal / semiconductor quantum well structure comprises a first semiconductor layer, a metal Al film layer and a second semiconductor layer, the metal Al film layer is sandwiched between the first semiconductor layer and the second semiconductor layer, and the metal Al film layer is a single crystal with unique orientation and has no twin crystal. The invention also provides a preparation method of the semiconductor / metal / semiconductor quantum well structure. The metal Al thin film epitaxially prepared by the two-step method is flat in surface, high in single crystal quality, free of twin crystal and low in optical loss, and the semiconductor / metal / semiconductor quantum well structure can be used for a semiconductor quantum information device.

Description

technical field [0001] The present invention relates to a kind of Al single crystal thin film that obtains high-quality wafer size and the semiconductor / metal / semiconductor quantum well structure that comprises single crystal Al thin film, epitaxial preparation method and its application, more specifically, relate to Si substrate The optimization of high-quality Al growth conditions for direct epitaxy includes substrate treatment, optimization of Al growth temperature, and in-situ annealing process. Background technique [0002] Metal Al thin films have excellent barrier and anti-corrosion properties, good electrical conductivity and optical properties, and their positive economic significance. Important position. The Al thin film with a purity greater than 99.95% can resist the corrosion of most acids and can be used as a protective film for instruments. The good conductivity of metal Al thin films is second only to silver and copper, and is widely used in the preparation...

Claims

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Application Information

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IPC IPC(8): H01L49/00
CPCH10N99/05
Inventor 芦红常梦琳袁紫媛
Owner NANJING UNIV
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