A liquid crystal display panel and its manufacturing method

Abstract

The invention provides a liquid crystal display panel and a manufacturing method thereof. The liquid crystal display panel comprises an IGZO (indium gallium zinc oxide) layer, a source electrode, a drain electrode, a pixel electrode, a gate insulation layer, a gate electrode, a scanning line, an Al2O3 insulation layer, an insulation film and a data line, wherein the IGZO layer is positioned on a substrate, and the source electrode, the drain electrode and the pixel electrode are positioned on the IGZO layer; the gate insulation layer is positioned on the source electrode and the drain electrode and between the source electrode and the drain electrode; the gate electrode is positioned on the gate insulation layer, and the scanning line is connected with the gate electrode; the Al2O3 insulation layer is positioned on the gate electrode, and the insulation film is positioned on the Al2O3 insulation layer; and the data line is positioned on the topmost layer. The manufacturing method adopts IGZO-TFT (Thin Film Transistor) with a self-alignment top gate structure; in the IGZO-TFT forming process, an Al film layer is laid, part of the IGZO layer can react to form the source electrode and the drain electrode through the high-temperature reaction in an oxygen environment, and the Al film layer reacts to form the Al2O3 insulation layer; on one hand, the stray capacitance Cgd of the liquid crystal panel is only about 1 / 5 of that of the conventional panel, and the kickback voltage is reduced so that the storage capacitance is reduced and the aperture ratio is increased; and on the other hand, the number of photomasks of a TFT panel is reduced to 4, and the cost is saved.

Description

technical field [0001] The invention relates to a method for manufacturing a liquid crystal panel. Background technique [0002] Energy saving, refinement, large-scale and low cost of LCD panels have always been the direction pursued by various companies, and TFT with excellent switching characteristics is a key point to solve the problem. [0003] LTPS-TFTLD (LowTemperaturePoly-silicon, low-temperature polysilicon thin-film transistor liquid crystal display) has the advantages of high resolution, fast response, high brightness, and high aperture ratio and has become a popular choice for energy saving, refinement, and large-scale. However, p-SiTFT is currently There are two problems. One is that the off-state current (that is, leakage current) of TFT is relatively large; the other is that it is difficult to prepare high-mobility p-Si material in a large area at low temperature, and there are certain difficulties in the process. [0004] IGZO (indium gallium zinc oxide, indi...

AI Technical Summary

Problems solved by technology

In order to protect IGZO so that it will not affect the characteristics of IGZO in the subsequent etching, sometimes it is necessary to form a barrier layer to protect the IGZO layer, so generally 5 to 7 masks become the mainstream, but this will increase the cost

Moreover, due to the relatively large parasitic capacitance Cgd of existing technologies such as coplanar TFT or bottom gate structure TFT,

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