Process method for processing titanium nitride residues on aluminum welding pad

Abstract

The invention provides a process method for processing titanium nitride residues on an aluminum welding pad. The process method comprises the following steps of: step 1, etching a barrier layer which is not covered by a photoresist layer, a substrate below the barrier layer and a top metal barrier layer until a metal layer is etched; step 2, completely removing the photoresist layer; step 3, depositing silicon nitride; covering the silicon nitride on the barrier layer, the top of a side wall of the substrate, a side wall of the metal barrier layer and the upper surface of the metal layer; step 4, carrying out photoresist layer deposition on the upper surface of the metal layer; utilizing a condition of aluminum welding pad photoetching to carry out coating and developing of light resistance; step 5, etching the silicon nitride which is not covered by the photoresist layer; step 6, removing the photoresist layer; and step 7, carrying out chemical washing. According to the process method for processing the titanium nitride residues on the aluminum welding pad disclosed by the invention, under the precondition of keeping the appearance of the aluminum welding pad, the titanium nitride residues on the aluminum welding pad can be removed and overmuch loss of bottom aluminum is not caused; and meanwhile, the caused waste of wafers can be greatly avoided, the process is simple and extra equipment and materials do not need to be added.

Description

Technical field [0001] The invention involves a residual removal process, especially the process method of treating titanium nitride residues on aluminum welding pads. Background technique [0002] The aluminum welding pad in the rear section is the last semiconductor manufacturing process before the chip is packaged. After the wafer is etching, the final test (appearance testing, electrical test, good rate test) will be entered.Dao packaging phase.Stacking structure of aluminum welding pads figure 1 It is shown that the aluminum is generally aluminum, titanium nitride, silicon oxide, and silicon nitrine. Because the aluminum pads are thick, the height of the wafer surface is uneven, so the insulator blocking layer (silicon oxide and silicon nitride) is relatively thick.Silicon nitride also has the effect of anti -ray and water vapor; because aluminum welding pads are used for subsequent metal welding cables, the areas to be carved are relatively large, generally the tens of micr...

AI Technical Summary

Problems solved by technology

It is used to solve the problem that titanium nitride residues will be produced when aluminum metal is etched in the prior art, and these residual titanium nitrides will cause the problem that the quality of subsequent metal welding wires will be affected after welding

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