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Composition for antireflective film for solar cell, antireflective film for solar cell, method for manufacturing antireflective film for solar cell, and solar cell

A solar cell and anti-reflection film technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of unusable, difficult semiconductor layer anti-reflection film, semiconductor characteristic degradation, etc., to suppress reflection and improve photoelectric conversion efficiency , The effect of easy power generation efficiency

Inactive Publication Date: 2013-05-01
MITSUBISHI MATERIALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, it cannot be used in bulk solar cells, substrate solar cells in which sunlight does not pass through the substrate, or silicon heterojunction solar cells
In addition, since the anti-reflection film is formed at 400°C or higher, when the anti-reflection film is formed on the semiconductor layer, the semiconductor characteristics are degraded by heating
Therefore, it is difficult to form an anti-reflection film on the semiconductor layer

Method used

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  • Composition for antireflective film for solar cell, antireflective film for solar cell, method for manufacturing antireflective film for solar cell, and solar cell
  • Composition for antireflective film for solar cell, antireflective film for solar cell, method for manufacturing antireflective film for solar cell, and solar cell
  • Composition for antireflective film for solar cell, antireflective film for solar cell, method for manufacturing antireflective film for solar cell, and solar cell

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Embodiment

[0117] Hereinafter, the present embodiment will be described in detail using examples, but the present embodiment is not limited thereto.

[0118] First, SiO used as a binder is produced by the following method 2 Binding agent. 11.0 g of HCl (concentration: 12 mol / l) was dissolved in 25 g of pure water to prepare an HCl aqueous solution. Use 500cm 3 140 g of tetraethoxysilane and 240 g of ethanol were mixed in a glass four-necked flask. While stirring the mixture, the aqueous HCl solution was added in one portion. After that, SiO was produced by reacting at 80°C for 6 hours 2 Binding agent. The SiO 2 The binder is a copolymer of silicon alkoxide, which is a non-polymer adhesive.

[0119] Mixtures having combinations shown in Table 1 and Table 2 (numbers represent parts by mass) were produced. Put 60g of the mixture and 100g of zirconia beads (MICROHYCA, SHOWA SHELL SEKIYU K.K.) with a diameter of 0.3mm into 100cm 3 glass bottle. The glass bottle was rotated repeatedl...

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Abstract

This composition for an antireflective film for a solar cell contains a translucent binder. The translucent binder contains either one or both of a polymer-type binder and a non-polymer-type binder, and of a total of 100 parts by mass of components other than a dispersion medium, the translucent binder content is 10 - 90 parts by mass. The refractive index of an antireflective film in which the composition for an antireflective film has been cured and formed is 0.70 - 1.90. This antireflective film for a solar cell contains a translucent binder. The translucent binder contains either one or both of a polymer-type binder and a non-polymer-type binder, and of a total of 100 parts by mass of components, the translucent binder content is 10 - 90 parts by mass. The refractive index is 1.70 - 1.90. The method for manufacturing this antireflective film forms an antireflective coating by applying the composition for an antireflective film on a transparent electrically conductive film by a wet coating method, and next, forms the antireflective film by curing the antireflective coating.

Description

technical field [0001] The present invention relates to a composition for an antireflection film of a solar cell, an antireflection film, a method for producing an antireflection film, and a solar cell. More specifically, the present invention relates to a solar cell having a transparent conductive film, an antireflection film, and an encapsulating material film, such as a single crystal silicon type solar cell, a polycrystalline silicon type solar cell, a silicon heterojunction solar cell, or a substrate (substrate) type solar cell. The battery, in particular, relates to a composition for an antireflection film of the solar cell, an antireflection film, and a method for producing the antireflection film. [0002] This application claims priority based on Japanese Patent Application No. 2010-223306 for which it applied in Japan on September 30, 2010, and uses the content for this specification. Background technique [0003] At present, from the standpoint of environmental p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216C08K3/22C08L101/00G02B1/11
CPCC08K5/0091C08K5/057C08K5/098H01L31/02168C09D5/00Y02E10/50G02B1/111C08K3/22C08L101/00H01L31/0216H01L31/04
Inventor 山崎和彦日向野怜子泉礼子林年治
Owner MITSUBISHI MATERIALS CORP