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Improved structure of device for eliminating phosphorus oxychloride in phosphorus diffusion furnace

A technology of phosphorus oxychloride and exclusion device, which is applied in the direction of diffusion/doping, crystal growth, electrical components, etc., and can solve problems such as phosphorus oxychloride leakage and operator hazards

Inactive Publication Date: 2013-05-08
陈功
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These ventilation devices are generally made of stainless steel or iron sheets, but phosphorus oxychloride is very corrosive, and usually these ventilation pipes will be corroded thoroughly in half a year to a year, and phosphorus oxychloride will leak out, which will cause great harm to the operator. big hazard

Method used

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  • Improved structure of device for eliminating phosphorus oxychloride in phosphorus diffusion furnace
  • Improved structure of device for eliminating phosphorus oxychloride in phosphorus diffusion furnace
  • Improved structure of device for eliminating phosphorus oxychloride in phosphorus diffusion furnace

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Embodiment Construction

[0031] Such as figure 2 Shown is the overall structure of the phosphorus oxychloride removal device of the phosphorus diffusion furnace of the present invention, which includes a buffer tank 2, an exhaust pipe 3 and a sealed water tank 4, and also includes a Figure 7 Cooling tank 5 shown.

[0032] Such as image 3 and Figure 4 As shown, it is a phosphorus diffusion furnace furnace tube furnace cap 1, which includes a cylindrical quartz material cap body 10 with a closed bottom, and an outwardly protruding opening mouth 12 is provided at the bottom of the cap body. A quartz snap ring 13 is welded on the inner wall, and the opening extension is arranged between the bottom surface of the snap ring and the bottom wall of the cap body. A quartz handle 11 is welded to the outer wall of the bottom of the cap body. The length of the opening extension mouth 12 is controlled at 3-5cm, and the inner diameter of the opening extension mouth is controlled at 0.5-1cm. The thickness o...

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Abstract

The invention discloses an improved structure of a device for eliminating phosphorus oxychloride in a phosphorus diffusion furnace. The improved structure comprises a buffer tank and an exhaust tube, wherein a furnace tube opening is formed on the rear side wall of a buffer tank body; the front side of the buffer tank body is open and is provided with a sealing door; a flow guide structure is arranged on the sealing door; an exhaust tube opening is formed on the right side wall of the buffer tank body; the exhaust tube is U-shaped; an air inlet is arranged at one end of the exhaust tube; an air outlet is arranged at the other end of the exhaust tube and is connected with an exhaust fan; a furnace tube of the phosphorus diffusion furnace stretches into the buffer tank via the furnace tube opening; the air inlet of the exhaust tube is communicated with the buffer tank via the exhaust tube opening; a furnace crown is arranged at the mouth of the furnace tube and comprises a cylindric quartz crown body with the bottom sealed; an opening extension mouth protruding outwards is arranged at the bottom of the crown body; and a quartz snap ring is welded on the inner wall at the bottom of the crown body. The improved structure utilizes the natural air and atomized dilute ammonia water to quickly cool the tail gas eliminated from the diffusion furnace tube to prevent the teflon coating of the exhaust tube from being molten and simultaneously liquefy phosphorus oxychloride in the exhaust tube quickly.

Description

technical field [0001] The invention relates to the field of manufacturing semiconductor discrete devices and solar cells. Background technique [0002] Phosphorus diffusion is a necessary process for manufacturing PN junctions of semiconductor discrete devices, integrated circuit chips and solar cells. At present, the technology used in this process is thermal diffusion technology. Semiconductor discrete devices are mainly used to manufacture diodes, triodes, power devices, IGBTs and thyristors, etc. This series of products has sales of tens of billions in China, and the production capacity is very large. On the other hand, as the use of solar cells, silicon wafers are also widely used. More than 70% of solar cells in the world use silicon wafers as cells. In 2011, the production capacity of 25GW has been achieved, and the polycrystalline consumption has reached 180,000 tons, which is six times the semiconductor consumption, so the output of solar energy is greater than th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B31/16H01L21/223
Inventor 陈功
Owner 陈功