Thin film transistor manufacturing method

Abstract

The invention belongs to the technical field of display, and discloses a thin film transistor manufacturing method. According to the thin film transistor manufacturing method, through a low-speed generating pattern, thin film on the contact interface of a gate insulation layer and a semiconductor layer is formed, the structure is compact, crystalline particles are small and uniform, contact resistance is little, conductive capacity of the contact interface is guaranteed, and thus a thin film transistor has a function of a switch. As for thin film which is not in the contact interface, the thin film is formed through the adoption of a high-speed generating pattern. On one hand, production time can be shortened, and utilization rate and production capacity of manufacturing equipment are improved; and on the other hand, the thickness of the gate insulation layer thin film can be ensured, and quality of the thin film transistor is guaranteed.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a method for manufacturing a thin film transistor. Background technique [0002] Thin Film Transistor-Liquid Crystal Display (TFT-LCD) has the characteristics of small size, low power consumption, no radiation, and relatively low manufacturing cost, and occupies a dominant position in the current flat panel display market. Thin Film Transistor (TFT for short) array substrate is one of the important components of TFT-LCD. [0003] A pixel matrix defined by gate lines and data lines intersecting horizontally and vertically is formed on the TFT array substrate, each pixel includes a TFT, and the display of the display is controlled by turning on and off the TFT. Wherein, each TFT also includes a gate insulating layer and an active layer sequentially formed between the gate line and the data line, the active layer includes a semiconductor layer and a doped semiconductor layer, and ...

AI Technical Summary

Problems solved by technology

If these three layers of thin films are all formed in a slow growth mode, the manufacturing time of the entire TFT array substrate will far exceed the factory's requirements, and it is easy to cause defects such as dust, resulting in defective products

If the overall thickness of these three layers is reduced in order to shorten the manufacturing time, the short circuit between the source and drain electrodes and the gate electrode will be caused due to the thin thickness of the gate insulating layer film, resulting in the TFT not having a switching function.

If the three layers of films are all formed in a rapid growth mode, the resistance of the contact interface between the gate insulating layer and the semiconductor layer will be large. This interface is used as the charge conducting layer of the TFT, and the decline in conductivity will seriously affect the switching function of the TFT.

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