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Optical proximity correction method

A technology of optical proximity correction and lithography process, which is applied in the field of lithography process, and can solve the problems of increasing the difficulty of masking in mask factories and large errors in irregular parts.

Inactive Publication Date: 2013-06-12
CSMC TECH FAB2 CO LTD
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Problems solved by technology

Figure 1B It is the effect picture obtained after OPC processing. It can be seen that on the same part, the original line parts have sharp corners, which will increase the difficulty for the mask factory when writing the mask.
and Figure 1C It is a simulation picture obtained by simulating the exposure effect. It can be seen that the error of the irregular part is relatively large, reaching about 11.3nm in this example, which is unacceptable for OPC correction.

Method used

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Embodiment Construction

[0031] The CD (critical dimension) of the key layers of the technology node below 0.13um, such as TO (active area level), GT (gate oxide level), and An (metal wiring level), is getting smaller and smaller, and CD is close to or even smaller than lithography The wavelength of the light wave used in the process, so in the photolithography process, due to the diffraction and interference of light, there is a certain deformation and deviation between the photolithography pattern obtained on the actual silicon wafer and the mask pattern. This kind of error directly affects circuit performance and production yield. In order to eliminate this kind of error as much as possible, an effective method is the optical proximity correction (OPC) method. As mentioned in the background technology, at present, due to the needs provided by customers, OPC correction processing graphics are becoming more and more complex, and due to the needs of different customers, many parts that do not conform t...

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Abstract

The invention relates to an optical proximity correction method. The method comprises the steps of pre-treating part not complying with rules of an original graphic provided by a client to make the part of graphic transformed into shapes complying with the rules; and then performing an OPC treatment on the whole graphic. Therefore, the optical proximity correction method can prevent influences on the OPC treatment brought by irregular graphics, and accuracy of the OPC treatment is greatly increased.

Description

technical field [0001] The invention relates to a photolithography process in the semiconductor manufacturing industry, in particular to an optical proximity correction (Optical Proximity Correction, OPC) method in the process of preparing a mask. Background technique [0002] Integrated circuit manufacturing technology is a complex process that is updated every 18 to 24 months. A key parameter that characterizes integrated circuit manufacturing technology, the minimum feature size, or Critical Dimension, has developed from the initial 125um to the current 0.13um or even smaller, which makes it possible to have millions of components on each chip. [0003] Photolithography is the driving force behind the development of integrated circuit manufacturing processes, and it is also one of the most complex technologies. Compared with other individual manufacturing technologies, photolithography has made a revolutionary contribution to the improvement of chip performance. Before ...

Claims

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Application Information

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IPC IPC(8): G03F1/36
CPCG03F1/36
Inventor 王谨恒陈洁
Owner CSMC TECH FAB2 CO LTD
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