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A composite substrate for film capacitors

A technology of thin film capacitors and composite substrates, which is applied in the direction of thin film/thick film capacitors, multilayer capacitors, components of fixed capacitors, etc.

Active Publication Date: 2016-04-27
HAIYAN LXDEER ELECTRONICS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The remaining 0.02% by weight is various impurities

Method used

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  • A composite substrate for film capacitors

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0011] see figure 1 The composite substrate for thin film capacitors has a double-layer substrate structure, the double-layer substrate structure includes a copper substrate and a nickel substrate containing a small amount of impurities formed on the copper substrate; wherein the copper substrate is formed using high-purity pure copper, Its purity is 99.999%; among them, the nickel substrate has the following materials according to the weight percentage:

[0012] The nickel content is greater than or equal to 99.98% by weight. The remaining 0.02% by weight is various impurities. The various impurities include: 0.0005-0.0008% by weight of manganese, 0.005-0.008% by weight of aluminum, 0.001-0.002% by weight of silver, 0.0005-0.001% by weight of chromium, 0.004-0.006% by weight of iron, 0.0005-0.0012 % by weight of silicon and 0.001-0.002% by weight of antimony and 0.001-0.002% by weight of tantalum.

[0013] It should be noted that in the composite substrate for film capacit...

Embodiment 2

[0024] see figure 1 The composite substrate for thin film capacitors has a double-layer substrate structure, the double-layer substrate structure includes a copper substrate and a nickel substrate containing a small amount of impurities formed on the copper substrate; wherein the copper substrate is formed using high-purity pure copper, Its purity is 99.999%; among them, the nickel substrate has the following materials according to the weight percentage:

[0025] The nickel content is greater than or equal to 99.98% by weight. The remaining 0.02% by weight is various impurities. The various impurities include: 0.0005-0.0008% by weight of manganese, 0.005-0.008% by weight of aluminum, 0.001-0.002% by weight of silver, 0.0005-0.001% by weight of chromium, 0.004-0.006% by weight of iron, 0.0005-0.0012 % by weight of silicon and 0.001-0.002% by weight of antimony and 0.001-0.002% by weight of tantalum.

[0026] Introduce the manufacturing method of this film capacitor composite...

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Abstract

The invention discloses a manufacturing method of a composite substrate used for a thin film capacitor. The method includes that a nickel substrate which contains multiple impurities is combined on a pure copper substrate with purity of 99.999% so that the composite substrate used for the thin film capacitor is formed; wherein the nickel substrate comprises the following materials by weight, content of nickel is greater than or equal to 99.98%, and other 0.02 % the multiple impurities. The multiple impurities comprises by weight, 0.0005-0.0008% of manganese, 0.005-0.008% of aluminum, 0.001-0.002% of silver, 0.0005-0.001% of chrome, 0.004-0.006% of ferrum, 0.0005-0.0012%of silicon, 0.001-0.002% of antimony, and 0.001-0.002% of tantalum.

Description

technical field [0001] The invention belongs to the field of thin film capacitors, in particular to a composite substrate for thin film capacitors. Background technique [0002] In existing film capacitors, higher requirements are placed on the capacitance of the capacitor. In the prior art, a film capacitor generally includes a substrate, a dielectric layer and an electrode layer. The microstructure of the dielectric layer is a key factor in determining the performance of the capacitor. Therefore, there are strict requirements on the material configuration of the thin film capacitor substrate. [0003] Most existing film capacitor substrates are made of metallic nickel. In order to increase the capacitance without affecting the performance of the capacitor, the purity and impurity composition of the nickel substrate cannot be ignored. If the nickel substrate contains undesired impurities, or its purity is insufficient, it will limit the capacity of the film capacitor, a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G4/002H01G4/33
Inventor 钱时昌
Owner HAIYAN LXDEER ELECTRONICS TECH