Preparation process for solar cell resisting potential induced degradation

A potential-induced attenuation and solar cell technology, applied in the field of solar cells, can solve problems such as low component performance, short-circuit current and fill factor reduction, and deterioration of battery surface passivation, so as to improve the ability to resist potential-induced attenuation and ensure performance Effect

Inactive Publication Date: 2013-06-19
建开阳光新能源科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The solar cell module has been exposed to high voltage for a long time, so that there is a leakage current between the glass and the packaging material, and a large amount of charge accumulates on the surface of the

Method used

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Examples

Experimental program
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Effect test

example 1

[0018] Clean the silicon wafer, remove the damaged layer, and make texture; put the silicon wafer into a tubular diffusion furnace for diffusion, the resistance after diffusion is 50Ω / port, and the junction depth is 0.35μm; remove the phosphosilicate glass from the diffused silicon wafer and Remove the back junction; deposit silicon nitride passivation anti-reflection layer on the surface of the emitter; the anti-reflection layer is a single-layer film with a thickness of 70nm and a refractive index of 2.2; screen-print the front electrode and the back electrode; sinter and test sorting.

example 2

[0020] Clean the silicon wafer, remove the damaged layer, and make texture; put the silicon wafer into a tubular diffusion furnace for diffusion, the resistance after diffusion is 55Ω / port, and the junction depth is 0.30μm; remove the phosphosilicate glass from the diffused silicon wafer and Remove the back junction; deposit a silicon nitride passivation anti-reflection layer on the surface of the emitter; the anti-reflection layer is a double-layer film, the thickness of the first layer is 20nm, the refractive index is 2.5, the thickness of the second layer is 50nm, the refractive index 2.1; screen printed front and back electrodes; sintered and tested for sorting.

example 3

[0022] Clean the silicon wafer, remove the damaged layer, and make texture; put the silicon wafer into a tubular diffusion furnace for diffusion, the resistance after diffusion is 50Ω / port, and the junction depth is 0.35μm; remove the phosphosilicate glass from the diffused silicon wafer and Remove the back junction; deposit silicon nitride passivation anti-reflection layer on the surface of the emitter; the anti-reflection layer is a three-layer film, the thickness of the first layer is 10nm, the refractive index is 2.5, the thickness of the second layer is 20nm, the refractive index is 2.2; the thickness of the third film is 40n, and the refractive index is 2.1; the front electrode and the back electrode are screen-printed; sintered and tested for sorting.

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Abstract

The invention discloses a preparation process for a solar cell resisting potential induced degradation. The preparation process includes the steps: (a) cleaning a silicon slice, removing a damaged layer and making herbs into wool; (b) placing the silicon slice into a tubular diffusion furnace for diffusion; (c) removing phosphorus silicon glass and a back junction of the diffused silicon slice; (d) growing a silicon dioxide layer on the surface of an emitting electrode and then depositing a silicon nitride layer or directly depositing a silicon nitride passivation antireflection layer on the surface of the emitting electrode; (e) screen-printing a back electrode and a front electrode; and (f) sintering, testing and sorting. By the preparation process for the solar cell resisting potential induced degradation, the potential induced degradation resistance of the solar cell and a module comprising the same can be improved, so that stable performances of the module in a high-voltage working environment are ensured.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a preparation process of a solar cell resistant to potential-induced attenuation. Background technique [0002] Potential-induced decay was first discovered by Sunpower in 2005. The solar cell module has been exposed to high voltage for a long time, so that there is a leakage current between the glass and the packaging material, and a large amount of charge accumulates on the surface of the cell, which deteriorates the passivation effect of the cell surface, resulting in a decrease in the open circuit voltage, short circuit current and fill factor, making the module Performance is below design standards. Contents of the invention [0003] The technical problem to be solved by the present invention is to provide a preparation process of a solar cell capable of ensuring stable performance of a photovoltaic module in a high-voltage working environment and resisting potential-induced at...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCH01L31/02167H01L31/068H01L31/1868Y02E10/547Y02P70/50
Inventor 鲁伟明钱晓峰初仁龙符欣庄飞闫路王启战王志刚费存勇郑直
Owner 建开阳光新能源科技有限公司
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