Mixed substrate encapsulation method and mixed substrate encapsulation structure for semiconductor device

Abstract

The invention provides a mixed substrate encapsulation method and a mixed substrate encapsulation structure for a semiconductor device. A mixed substrate is used for encapsulating the semiconductor device and comprises a support frame and a transparent substrate. The support frame comprises a frame bottom and a frame wall which are connected with each other, wherein the frame bottom is provided with a first through hole, the frame wall is provided with a second through hole, the area of the first through hole is smaller than that of the second through hole, and the first through hole is communicated with the second through hole. The transparent substrate is located in the second through hole and fixed on the upper surface of the frame bottom or the side of the frame wall. A first micropore is arranged between the transparent substrate and the frame bottom. A second micropore is arranged between the transparent substrate and the frame wall. The first micropore is communicated with the second micropore. The strength of the mixed substrate is much higher than that of a large optical glass, so that yield and efficiency of the mixed substrate encapsulation structure and the mixed substrate encapsulation method are increased while cost is reduced.

Description

technical field [0001] The invention relates to the field of semiconductor packaging, in particular to a hybrid substrate, a semiconductor device packaging method and a packaging structure. Background technique [0002] In the semiconductor device packaging process, a packaging substrate is usually used, and the packaging substrate is used to package and protect the functional surface of the semiconductor device. Taking the packaging structure of an image sensor as an example, the existing image sensor needs to use a large piece of optical glass as a packaging substrate in the packaging process. An image sensor is a device that converts one-dimensional or two-dimensional optical information (optical information) into electrical signals. Image sensors can be further divided into two different types: Complementary Metal Oxide Semiconductor (CMOS) image sensors and Charge Coupled Device (CCD) image sensors. The traditional image sensor packaging method is usually packaged by ...

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Problems solved by technology

[0005] 1) The above-mentioned encapsulation technology uses a whole piece of optical glass 105, and only the optical glass 105 provides strength. However, due to the overall brittleness of the glass, the mechanical strength of the encapsulation structure is low and it is easy to break; Expensive, thus increasing packaging costs;

[0006] 2) Since the cavity wall 103 is obtained by exposure and development of photosensitive materials, its cost of raw materials and process costs are high, and the cavity wall 103 will be incompletely exposed during the production process and cause dust (particle) pollution. Dust pollution will lead to the scrapping of a large piece of optical glass 105, which further increases the packaging cost;

[0007] 3) Since there is a certain degree of vacuum in the cavity 104, the optical glass 105 will be subjected to a relatively high atmospheric pressure when it is not heated, making the optical glass 105 more likely to break during packaging, cutting or use

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