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Organic thin-film transistor based transparent color-variable multiple-anti-counterfeiting flash memory device and manufacturing method and application thereof

A technology of flash storage and organic thin film, which is applied in the field of transparent and color-changing multiple anti-counterfeit flash storage devices, can solve the problems of the Internet of Things destroying the economy and losses, and achieve excellent security performance and good portability

Inactive Publication Date: 2013-06-26
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Otherwise, this fake high-tech product will cause great damage and economic loss to the Internet of Things

Method used

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  • Organic thin-film transistor based transparent color-variable multiple-anti-counterfeiting flash memory device and manufacturing method and application thereof
  • Organic thin-film transistor based transparent color-variable multiple-anti-counterfeiting flash memory device and manufacturing method and application thereof
  • Organic thin-film transistor based transparent color-variable multiple-anti-counterfeiting flash memory device and manufacturing method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] (1) In the organic thin film transistor-based transparent color-changing multiple anti-counterfeiting flash memory device of the present invention, the flexible substrate 1 is a polyimide (PI) transparent substrate with a thickness of 0.028mm, and the thickness of the flexible substrate can be adjusted according to the needs of the application depends. The cleaned flexible substrate 1 is placed in a drying oven to bake and dry.

[0055] (2) will be doped with europium oxide (Eu 2 o 3 ) of gadolinium oxide (Gd 2 o 3 ) under high vacuum (vacuum degree 5.0×10 -3 Pascal) deposited on the flexible substrate 1 by electron beam evaporation technique, the obtained Gd 2 o 3 :Eu 2 o 3 The thickness of the film was 100 nanometers, as the optical film 2.

[0056] (3) Prepare a PDMS film with a thickness of 300 nm on the optical film 2 by a solution spin coating method as the modification layer 3 .

[0057] (4) A PEDOT:PSS thin film is prepared on the modification layer 3 ...

Embodiment 2

[0063] (1) In the transparent color-changing multiple anti-counterfeiting flash memory device based on organic thin film transistors of the present invention, the flexible substrate 1 is a 0.1 mm thick polyethylene terephthalate (PET) film. The cleaned flexible substrate 1 is baked and dried in an oven.

[0064] (2) Incorporate DBR fragments into PS solution, where the low refractive index material of DBR is SiO 2 , the high refractive index material is TiO 2 , the number of cycles is 40. The film obtained by spin coating was used as the optical film 2, and the film thickness was 200 nm.

[0065] (3) Prepare a PI polymer film with a thickness of 200 nanometers on the optical film 2 by solution spin coating method as the modification layer 3 .

[0066] (4) Under high vacuum (vacuum degree 4.0×10 -2 Pascal) deposited ITO on the modification layer 3 by magnetron sputtering as the gate 4 . During the deposition process, the substrate temperature is 80°C, the thickness of the ...

Embodiment 3

[0072] Referring to Example 1, the difference is that the optical film 2 is composed of two layers of films. First under high vacuum (vacuum degree 5.0×10 -3 Pascal) doped with europium oxide (Eu 2 o 3 ) Zirconia (ZrO 2 :Eu 2 o 3 )film. Incorporate DBR fragments into PS solution, where the low refractive index material of DBR is SiO 2 , the high refractive index material is Ta 2 o 5 , the number of cycles is 38. Then, the PS solution mixed with DBR fragments was used to form a film on ZrO by solution spin coating. 2 :Eu 2 o 3 On the film, a double-layer film is finally formed to form the optical film 2 together. All the other steps are the same as in Example 1. The device in Example 3 has good portability, transparency, and memory properties, and simultaneously has photoluminescent and optically variable anti-counterfeiting properties.

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Abstract

The invention relates to an organic thin-film transistor based transparent color-variable multiple-anti-counterfeiting flash memory device and a manufacturing method and application thereof. The transparent color-variable multiple-anti-counterfeiting flash memory device specifically structurally comprises a flexible substrate, an optical thin film, a buffer layer, a grid, an insulating layer, an active layer, a source electrode and a drain electrode. The transparent color-variable multiple-anti-counterfeiting flash memory device has excellent portability and transparent and memory characteristics, has photoluminescence or optical color-variable anti-counterfeiting performance, can be integrated on a radio frequency identification tag, and is applied to various intelligent business systems.

Description

technical field [0001] The invention relates to the technical field of thin-film transistors, in particular to a transparent color-changing multiple anti-counterfeiting flash memory device based on organic thin-film transistors and its manufacturing method and application. Background technique [0002] During the development of organic optoelectronics, organic thin-film transistors, organic light-emitting diodes, and organic solar cells have all received great attention. Like conventional silicon-based semiconductor devices, organic electronic devices with memory storage function play an important role in organic electronic circuit systems. Flash memory devices (Flashmemorydevices) are one of the core devices in large-size displays, disposable array sensors, radio frequency identification tags (RFIDs) and intelligent storage systems. Fabricating cheap organic thin film transistors is an effective way to reduce the cost of such devices and apply them in special cases. The f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/10H01L51/40
Inventor 刘星元张楠范翊
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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