Ultralow-power-consumption and high-performance bandgap reference source

Abstract

The invention discloses an ultralow-power-consumption and high-performance bandgap reference source which comprises a reference current generation circuit, a first reference voltage generation circuit and a second reference voltage generation circuit, wherein the reference current generation circuit comprises a first PTAT (proportional to absolute temperature) circuit and first and second phase inverters arranged at the preceding stage of the first PTAT circuit; the first reference voltage generation circuit comprises a second PTAT circuit and a first operational amplifier circuit connected with the second PTAT circuit; the second PTAT circuit is used for generating a reference voltage; the first operational amplifier circuit is used for receiving reference level, a control signal and the reference voltage; the first operational amplifier circuit has a lager tail current when electrified and can quickly enter a normal working state; and the second reference voltage generation circuit comprises a third operational amplifier circuit, a voltage division circuit connected with an output of the third operational amplifier circuit, and a compensation circuit bridged between a first-stage output and a second-stage output. According to the bandgap reference source, the shortcoming of excessive dependence of most of bandgap reference source circuits on the threshold voltage of an MOS (metal oxide semiconductor) tube to a great extent is overcome, so that the structures of the circuits can normally work in the higher voltage input range.

Description

Technical field: [0001] The invention relates to a bandgap reference source (bandgap), especially an ultra-low power consumption high-performance bandgap reference source of a wide power supply range. technical background: [0002] The role of the bandgap reference source is to generate a reference voltage that has nothing to do with power supply, environment, temperature, and process changes. The reason why it can realize the above functions mainly depends on the negative temperature characteristics of the Vbe junction voltage of the PNP tube and the positive temperature characteristics of VT. cancel each other out. So now most of the bandgap reference power supplies are implemented using the classic PTAT structure. [0003] See figure 1 A schematic diagram of the circuit for a common bandgap reference is shown. The general working principle of the circuit is as follows: two PNP tubes, one of which has N times the emitter junction area of ​​the other, they are connected ...

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Problems solved by technology

[0008] In view of the above problems, the present invention provides an ultra-low power consumption high-performance bandgap reference source to solve the problems of fast start-up and low power consumption of the bandgap reference voltage source in special field applications, and solve the problems of bandgap reference voltage source in special field applications. Low voltage wide range problem

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