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Calculation Method of Equilibrium Composition of Semiconductor Quantum Dots

A technology of balancing components and calculation methods, applied in the field of quantum dots, can solve problems such as low calculation efficiency, achieve the effects of reducing optimization variables, improving calculation efficiency, and simplifying calculation models

Inactive Publication Date: 2015-10-14
BEIJING UNIV OF POSTS & TELECOMM
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  • Description
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Problems solved by technology

[0006] The technical problem to be solved by the present invention is to provide a method for calculating the balance composition of semiconductor quantum dots, so as to solve the problem of low calculation efficiency in the method for calculating the balance composition distribution of quantum dots in the prior art

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  • Calculation Method of Equilibrium Composition of Semiconductor Quantum Dots
  • Calculation Method of Equilibrium Composition of Semiconductor Quantum Dots
  • Calculation Method of Equilibrium Composition of Semiconductor Quantum Dots

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Embodiment Construction

[0042] The present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.

[0043] The composition distribution of quantum dots is closely related to the material, shape, growth temperature, deposition rate, annealing environment, lattice mismatch inside quantum dots, material diffusion and other factors of quantum dots. In this embodiment, the deposition rate during quantum dot growth and the influence of kinetic factors such as material diffusion between the quantum dot and the substrate are ignored.

[0044] Such as figure 1 As shown, the present embodiment describes a method for calculating the equilibrium composition of semiconductor quantum dots, comprising the following steps:

[0045] S1: Establish substrate and quantum dot models.

[0046] Common In in selected experiments in this example x Ga 1-x The As truncated pyramid quantum dot is used as the quantum dot model; the cuboid GaAs substrate is used as the subst...

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Abstract

The invention discloses a method for calculating semiconductor quantum dot balance components. The method comprises the steps as follows: building a substrate and a quantum dot model; meshing the built substrate and quantum dot model by fine grid blocks, simplifying the quantum dot model into a plurality of volume element combinations, and replacing volume elements with grid nodes in the quantum dot model; assigning a component value to each grid node in the quantum dot model, and taking each component value as a calculation variable; setting an average quantum dot component to be constant, and calculating the Gibbs free energy of the quantum dot model, the sensitivity of the Gibbs free energy to the quantum dot component distribution and the sensitivity of the average quantum dot component to the quantum dot component distribution through a finite element method; and obtaining the quantum dot component distribution when the Gibbs free energy of the quantum dot model is minimal according to the Gibbs free energy of the quantum dots, the average quantum dot component, the Gibbs free energy components and the sensitivity information. According to the method, the efficiency of calculating the quantum dot balance component distribution is improved.

Description

technical field [0001] The invention relates to the technical field of quantum dots, in particular to a method for calculating the equilibrium composition of semiconductor quantum dots. Background technique [0002] The structure and application of quantum dot materials is one of the most cutting-edge research fields in the world. Quantum dots are semiconductor nanostructures that bind conduction band electrons, valence band holes, and excitons in three spatial directions. The movement of electrons is restricted in three-dimensional space, so it has many unique properties in the field of optoelectronics. Such as: quantum effect, surface effect, confinement effect, size effect, quantum tunneling, which greatly expand the application field of semiconductor materials. Due to the low density of states and the sharpening of energy levels in quantum dots, its structure produces a three-dimensional quantum confinement effect on the carriers in it, thereby changing its electrical ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F17/50
Inventor 王东林周帅俞重远刘玉敏叶寒赵龙芦鹏飞韩利红
Owner BEIJING UNIV OF POSTS & TELECOMM
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