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Method for removing silicon thick-film on silicon carbide substrate

A silicon carbide and substrate technology, which is applied in the field of removing silicon thick films on silicon carbide substrates, can solve the problems of long cycle time, long time consumption, and changes in the shape of the mirror blank of the silicon carbide substrate, so as to overcome the long cycle time and improve processing efficiency , the effect of high practical value

Active Publication Date: 2013-07-17
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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Problems solved by technology

[0005] In order to solve the existing technical problems that the traditional physical polishing method has a long period and time-consuming when correcting the surface shape accuracy of the mirror blank of the silicon carbide substrate, and there is a risk of changing the mirror blank surface shape of the silicon carbide substrate, the present invention provides a method for removing Method for Thick Films of Silicon on Silicon Carbide Substrates

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  • Method for removing silicon thick-film on silicon carbide substrate

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Embodiment Construction

[0019] The present invention will be described in further detail below in conjunction with the accompanying drawings.

[0020] Such as figure 1 As shown, the method for removing the thick silicon film on the silicon carbide substrate of the present invention comprises the following steps:

[0021] Step 1: Dilute the sodium hydroxide solution with a mass percentage concentration of 50% and water according to the volume ratio of 1:10 to form a dilute sodium hydroxide solution, and then use the prepared dilute sodium hydroxide solution to clean the silicon carbide coated with a silicon thick film Base 10 minutes;

[0022] Step 2: Prepare a dilute nitric acid solution with nitric acid with a concentration of 68% by mass and water at a volume ratio of 1:3, and clean the silicon carbide substrate coated with a silicon thick film for 5 minutes with the prepared dilute nitric acid solution;

[0023] Step 3: Prepare a mixed solution of nitric acid and hydrofluoric acid at a volume ra...

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Abstract

The invention provides a method for removing silicon thick-film on a silicon carbide substrate, and belongs to the technical field of film deposition. The method employs a chemical reagent to remove silicon thick-film and comprises the steps of: first removing organic pollutants on the surface with an alkali and acid solvent; then using a mixed acid solution to corrode and remove the silicon thick-film; and finally cleaning the surface of the silicon carbide substrate. The invention has the following beneficial effects: the method can quickly remove the silicon thick-film without damage of silicon carbide substrate and surface shape, overcomes the technical risk problems of periodic physical polishing method, such as long period, large time consumption and easy change of silicon carbide substrate mirror embryo surface, effectively improves the processing efficiency of the silicon carbide substrate, and has very high practical value.

Description

technical field [0001] The invention belongs to the technical field of thin film deposition, and in particular relates to a method for removing a silicon thick film on a silicon carbide substrate. Background technique [0002] Silicon carbide material is a new type of mirror blank material, which has the advantages of good thermal stability, high specific stiffness and near-net shape molding. There are usually two types of silicon carbide materials used as mirror substrates: sintered silicon carbide and reaction sintered silicon carbide. Sintered silicon carbide is to sinter powdered silicon carbide into the desired shape by high-temperature sintering, but micropores will be formed during the sintering process, and these micropores cannot be eliminated even after precise polishing. Volume scattering occurs when mirror surfaces affect reflection efficiency. Reaction sintered silicon carbide is to reduce the generation of micropores by adding silicon during the sintering pro...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B41/91
Inventor 王彤彤高劲松王笑夷
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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