Lateral diffused metal-oxide semiconductor element
A technology of oxidizing semiconductors and metals, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of non-conformity, energy loss, small reverse current path area and conduction speed, etc., to speed up, save area, The effect of increasing the magnitude of the current
Active Publication Date: 2013-07-17
UNITED MICROELECTRONICS CORP
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Problems solved by technology
[0004] Although the parasitic diode provides a source-to-drain reverse current path to guide minority carriers, the reverse source current cannot be quickly eliminated due to the small size and conduction speed of the reverse current path. And cause the energy loss in the switching of the existing laterally diffused metal oxide semiconductor device
Therefore, eliminating reverse source current through parasitic diodes does not meet current needs
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[0034] Please refer to Figure 1 to Figure 3 , figure 1 It is a schematic top view of a laterally diffused metal oxide semiconductor device according to a first preferred embodiment of the present invention, wherein figure 2 for figure 1 a schematic sectional view along section line A-A', and image 3 for figure 1 Schematic cross-section along section line B-B'. like Figure 1 to Figure 3 As shown, the laterally diffused metal oxide semiconductor device 100 includes a substrate 102, a first doped region 104, a second doped region 106, a field oxide layer 108, a third doped region 110, two fourth doped regions The impurity region 112 , a gate structure 114 and a contact metal 116 . The first doped region 104 , the third doped region 110 and the fourth doped region 112 have a first conductivity type, and the substrate 102 and the second doped region 106 have a second conductivity type different from the first conductivity type . In this embodiment, the first conductivit...
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The invention discloses a lateral diffused metal-oxide semiconductor element which includes a first doped region, a second doped region, a third doped region, a grid structure and a metal contact. The first doped region and the third doped region are provided with a first conduction type, and the second doped region is provided with a second conduction type. The second doped region is arranged in the first doped region, is provided with a profile with a shape resembling a track of a playground and is provided with a long shaft. The third doped region is arranged in the second doped region. The grid structure is arranged on a portion, which is on one side of the third doped region, of the first doped region and the second doped region. The metal contact is arranged on a portion of the first doped region, which is located on one side where the second doped region extends out along the long shaft of the second doped region, and the metal contact is in contact with the first doped region.
Description
technical field [0001] The invention relates to a laterally diffused metal oxide semiconductor element, in particular to a laterally diffused metal oxide semiconductor element with a Schottky diode. Background technique [0002] A laterally diffused metal-oxide-semiconductor (LDMOS) device is a common power semiconductor device. Since the laterally diffused metal oxide semiconductor device has a horizontal structure, it is easy to manufacture and easy to integrate with the current semiconductor technology, thereby reducing the manufacturing cost. At the same time, it can withstand high breakdown voltage and has high output power, so it is widely used in power converters, power amplifiers, switches, rectifiers and other components. [0003] In existing laterally diffused metal oxide semiconductor devices, the N-type drain doped region and the P-type body doped region are usually arranged in the N-type drift region, and the N-type source doped region is arranged in the P-type...
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Login to View More IPC IPC(8): H01L29/78H01L29/06H01L29/423
Inventor 林安宏林宏泽黄柏睿廖伟善颜挺洲周昆宜陈纯伟简明勇
Owner UNITED MICROELECTRONICS CORP