Maskless Lithography System Based on Colloidal Microsphere Nanolens
A technology of maskless lithography and colloidal microspheres, which is applied in the direction of optics, optomechanical equipment, and patterned surface photolithography, can solve the problems of low production efficiency and uncontrollable quality, and achieve highly accurate and orderly graphics , Easy to industrialized production, low cost effect
Active Publication Date: 2016-08-31
INST OF MECHANICS CHINESE ACAD OF SCI
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Problems solved by technology
[0004] The technical problem to be solved by the present invention is to overcome the problem that the existing colloidal micro-nanosphere photolithography technology needs to repeatedly assemble micro-nanospheres, which makes the preparation efficiency low and the quality is uncontrollable. Photolithography system, no need to repeatedly prepare monolayer colloidal microspheres
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[0031] Embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined arbitrarily with each other.
[0032] The invention provides a maskless photolithography system based on a colloidal microsphere nano-lens as a focusing element, and adopts a colloidal microsphere nano-lens as a focusing element.
[0033] like figure 1 As shown, the maskless lithography system of the embodiment of the present invention includes the exposure light source 10 (which forms a light beam 11) required for exposure, the exposure mobile platform 12, and the support substrate 13 and the colloidal microsphere nanolens by the colloidal microsphere nanolens 14 is composed of a focusing element, under which a photoresist 16 and a substrate 17 are arranged to form an element to be exposed.
[0034] Adopt ...
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Abstract
The invention discloses a maskless photoetching system based on a colloid microballoon nanometer lens, and the maskless photoetching system is used for realizing the transfer of a micro-nano structure. The system based on the existing photoetching system utilizes the nanometer lens prepared by a colloid microballoon to gather light beams, a formed focusing array can carry out sensitization on a photoresist, and dot matrix arrangement with the distance of 100nm-2000nm is realized. The system realizes a micro-nano dot matrix structure, the process is simple, the additional equipment is not needed, and the defects that the micro-nano balls need to repeatedly assemblied, so that the industrialization is hard, the processing efficiency is low, the generated quality can not be controlled in a nanoball photoetching process are overcome. The maskless photoetching system provided by the invention has the advantages that the height of pattern transfer can be controlled, the heights of patterns are accurate and ordered, the patterns are various, the operation is simple, the cost is low, the commercial process is convenient, and the maskless photoetching system has a good application prospect in preparing a nanometer patterned substrate, a quantum dot, a plasma, a mesh electrode, a photonic crystal, a micro-nano device and the like.
Description
technical field [0001] The invention relates to semiconductor micro-nano processing equipment, in particular to a maskless photolithography system based on colloidal microsphere nano lenses. Background technique [0002] In the traditional photolithography process, the mask pattern is reduced by several times (1-20 times) through the optical system, then projected onto the photoresist, and then developed to obtain the desired pattern. With the development of the semiconductor industry, the feature size is shrinking day by day, and the traditional lithography is facing more and more challenges. There is a bottleneck in the lithography of nanometer-level graphics, and the use of electron beam exposure will make the cost high and it is not convenient for large-scale industrial production. In addition, the manufacturing cost and manufacturing time (fabrication efficiency) of the mask is also an important challenge. For example, the mask price of a 90nm integrated circuit is as...
Claims
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IPC IPC(8): G03F7/207
Inventor 蓝鼎吴奎魏同波王育人
Owner INST OF MECHANICS CHINESE ACAD OF SCI