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Plasma cleaning method

A plasma and remote plasma technology, which is applied in the field of integrated circuit manufacturing, can solve the problem of metal aluminum contamination on the back of silicon wafers, and achieve the effect of improving metal aluminum pollution

Inactive Publication Date: 2013-07-24
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a plasma cleaning method to solve the problem that the back of the existing silicon wafer is contaminated by metal aluminum

Method used

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Embodiment 1

[0033] Please refer to figure 2 , figure 2 Shown is a flow chart of a plasma cleaning method according to an embodiment of the present invention. Such as figure 2 As shown, the plasma cleaning method 1 comprises the following steps:

[0034] S11: performing remote plasma cleaning;

[0035] S13: Perform nitrogen radio frequency in-situ plasma cleaning;

[0036] S14: Perform protective film deposition.

[0037] Specifically, firstly, a reaction gas is introduced into the remote plasma system (RPS), and the reaction gas is NF3, and the reaction gas NF3 is ionized by a high-frequency power supply to generate fluorine-containing plasma, and then, the fluorine-containing plasma is transported into the chamber, and then, step S11 is performed, and the fluorine-containing plasma reacts with the deposited film on the chamber to generate a fluorine-containing gas. The time of remote plasma cleaning is generally more than 200 seconds, preferably, the time of remote plasma cleani...

Embodiment 2

[0045] Please refer to image 3 , image 3 Shown is a flow chart of a plasma cleaning method 2 according to an embodiment of the present invention. Such as image 3 As shown, the plasma cleaning method 2 comprises the following steps:

[0046] S21: performing remote plasma cleaning;

[0047] S22: performing oxygen radio frequency in-situ plasma cleaning;

[0048] S23: Perform nitrogen radio frequency in-situ plasma cleaning;

[0049] S24: Perform protective film deposition.

[0050] After the remote plasma cleaning is completed, step S22 is executed. During oxygen radio frequency in-situ plasma cleaning, a reaction gas is passed into the chamber, and the reaction gas is mainly O2. When the O2 flow is stable at 4000SCCM to 8000SCCM, turn on the radio frequency, the radio frequency is 13.36MHZ, and the power is 600W to 1000W. O2 is ionized to generate oxygen-containing plasma, and the oxygen-containing plasma collides with the cavity to exchange heat, so that the tempera...

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Abstract

The invention provides a plasma cleaning method, which comprises the following steps of executing remote plasma cleaning; executing nitrogen radio-frequency in-place plasma cleaning; and executing protective film deposition. According to the plasma cleaning method, the remote plasma cleaning and the nitrogen radio-frequency in-place plasma cleaning are combined for cleaning, and the problem that the back of a wafer is contaminated by metallic aluminum is greatly improved.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, in particular to a plasma cleaning method. Background technique [0002] As we all know, the main device in an integrated circuit, especially a VLSI, is a metal oxide semiconductor field effect transistor (MOS transistor for short). With the continuous shrinking of the device size, the process requirements for transistor manufacturing are getting higher and higher, and the types of metals used in the transistor manufacturing process are also increasing. At the same time, various metal contamination problems often arise during the fabrication of integrated circuits. Once metal contaminates the back of the silicon wafer, it will cause contamination of the subsequent process equipment, and the silicon wafer entering the subsequent equipment will also be contaminated by the equipment, resulting in cross-contamination of the silicon wafer and equipment. Moreover, some proces...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02
CPCH01L21/02057C23C16/4405B08B9/00
Inventor 桑宁波周军
Owner SHANGHAI HUALI MICROELECTRONICS CORP